Multilayer ceramic electronic component

ABSTRACT

A multilayer ceramic electronic component includes a multilayer body including stacked ceramic layers, internal conductive layers stacked on the ceramic layers, and external electrodes each connected to the internal conductive layers. The internal conductive layers each include holes each having a different area equivalent diameter. The holes include first holes including ceramic pillars therein and second holes not including ceramic pillars therein. The ceramic pillars connect ceramic layers on sides of the internal conductive layers. When an area equivalent diameter in which a cumulative value in a cumulative distribution of area equivalent diameters of the holes existing in each of the internal conductive layers is 90% is defined as an area equivalent diameter D90, an abundance ratio of the first holes in a first population including holes each having the area equivalent diameter D90 or more is about 14% or more.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority to Japanese PatentApplication No. 2021-100424 filed on Jun. 16, 2021. The entire contentsof this application are hereby incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a multilayer ceramic electroniccomponent.

2. Description of the Related Art

Conventionally, multilayer ceramic capacitors have been known.Generally, the multilayer ceramic capacitors each include a multilayerbody including dielectric layers and internal electrode layers which arealternately laminated therein. For example, Japanese Unexamined PatentApplication Publication No. 2018-46086 discloses a multilayer ceramiccapacitor including a multilayer body including dielectric layers andinternal electrode layers which are alternately laminated therein, and aplurality of auxiliary electrodes.

The multilayer ceramic capacitor disclosed in Japanese Unexamined PatentApplication Publication No. 2018-46086 includes the plurality ofauxiliary electrodes. This reduces or prevents electric fieldconcentration and thus improves product reliability. However, JapaneseUnexamined Patent Application Publication No. 2018-46086 does not takeinto consideration that the holes in the internal electrode layersaffect the reliability of the multilayer ceramic capacitor.

SUMMARY OF THE INVENTION

Preferred embodiments of the present invention provide multilayerceramic electronic components that are each able to reduce or preventelectric field concentration.

A multilayer ceramic electronic component according to a preferredembodiment of the present invention includes a multilayer body includinga plurality of stacked ceramic layers, a plurality of internalconductive layers stacked on the ceramic layers, a first main surfaceand a second main surface opposing each other in a height direction, afirst side surface and a second side surface opposing each other in awidth direction perpendicular or substantially perpendicular to theheight direction, and a first end surface and a second end surfaceopposing each other in a length direction perpendicular or substantiallyperpendicular to the height direction and the width direction, andexternal electrodes each connected to the internal conductive layers,wherein the internal conductive layers each include a plurality of holeseach having a different area equivalent diameter, the plurality of holesinclude first holes including ceramic pillars therein and second holesnot including ceramic pillars therein, the ceramic pillars connectingceramic layers on one side and one other side of the internal conductivelayers, when an area equivalent diameter in which a cumulative value ina cumulative distribution of area equivalent diameters of the pluralityof holes existing in each of the internal conductive layers is about 90%is defined as an area equivalent diameter D90, an abundance ratio of thefirst holes in a first population including holes each having the areaequivalent diameter D90 or more is about 14% or more.

According to preferred embodiments of the present invention, it ispossible to provide multilayer ceramic electronic components that areeach able to reduce or prevent electric field concentration.

The above and other elements, features, steps, characteristics andadvantages of the present invention will become more apparent from thefollowing detailed description of the preferred embodiments withreference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an external perspective view of a multilayer ceramic capacitoraccording to a preferred embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II-II of themultilayer ceramic capacitor shown in FIG. 1 .

FIG. 3 is a cross-sectional view taken along the line III-III of themultilayer ceramic capacitor shown in FIG. 2 .

FIG. 4A is a cross-sectional view taken along the line IVA-IVA of themultilayer ceramic capacitor shown in FIG. 2 .

FIG. 4B is a cross-sectional view taken along the line IVB-IVB of themultilayer ceramic capacitor shown in FIG. 2 .

FIG. 5 is an enlarged view of a V portion of the multilayer ceramiccapacitor 1 shown in FIG. 4A.

FIG. 6 is a diagram of area equivalent diameter distribution data of aplurality of holes existing in an internal electrode layer.

FIG. 7A is a diagram of a model of the internal electrode layer used ina first simulation.

FIG. 7B is a diagram of an electric field strength distribution in thevicinity of the holes in the internal electrode layer.

FIG. 8 is a graph of a maximum field strength in a model calculated foreach simulation model in which the value of an area equivalent diameterD99 varies.

FIG. 9 is a graph plotting an average electric field strength of thearea equivalent diameter D90 or more which is calculated in a simulationmodel in which the ceramic pillar ratio of holes each having an areaequivalent diameter D90 or more varies.

FIG. 10 is a graph of the values of the normalized maximum fieldstrengths of the first and second models.

FIG. 11 is a graph plotting the maximum field strength in the modelcalculated for each simulation model in which the coverage of theinternal electrode layer varies.

FIG. 12 is a graph plotting the maximum field strength in the modelcalculated for each simulation model in which the thickness of theinternal electrode layer varies.

FIG. 13A is a diagram of a model of the holes in the internal electrodelayer used in a fifth simulation.

FIG. 13B is a diagram of the electric field strength distribution in thevicinity of the holes in the internal electrode layer.

FIG. 14 is a graph of normalized plots of the maximum field strengthvalues produced in the vicinity of holes of different circularity.

FIG. 15 is a graph of the values of the normalized maximum fieldstrengths of the third and fourth models.

FIG. 16 is an image of a scanning electron microscope corresponding tothe enlarged view of the XVI portion of the multilayer ceramic capacitorshown in FIG. 3 , and is a diagram showing a burned state at the time ofelectrical breakdown of a multilayer body when subjected to anaccelerated life test.

FIG. 17A is a diagram of a multilayer ceramic capacitor including atwo-portion structure.

FIG. 17B is a diagram of a multilayer ceramic capacitor including athree-portion structure.

FIG. 17C is a diagram of a multilayer ceramic capacitor including afour-portion structure.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will be described belowwith reference to the drawings.

Hereinafter, a multilayer ceramic capacitor 1 defining and functioningas a multilayer ceramic electric component according to a preferredembodiment of the present invention will be described. FIG. 1 is anexternal perspective view of a multilayer ceramic capacitor 1 accordingto a preferred embodiment of the present invention. FIG. 2 is across-sectional view taken along the line II-II of the multilayerceramic capacitor 1 shown in FIG. 1 . FIG. 3 is a cross-sectional viewtaken along the line III-III of the multilayer ceramic capacitor 1 shownin FIG. 2 . FIG. 4A is a cross-sectional view taken along the lineIVA-IVA of the multilayer ceramic capacitor 1 shown in FIG. 2 . FIG. 4Bis a cross-sectional view taken along the line IVB-IVB of the multilayerceramic capacitor 1 shown in FIG. 2 .

The multilayer ceramic capacitor 1 includes a multilayer body 10 andexternal electrodes 40.

The XYZ Cartesian coordinate system is shown in FIGS. 1 to 4B. A lengthdirection L of the multilayer ceramic capacitor 1 and the multilayerbody 10 corresponds to the X direction. A width direction W of themultilayer ceramic capacitor 1 and the multilayer body 10 corresponds tothe Y direction. A height direction T of the multilayer ceramiccapacitor 1 and the multilayer body 10 corresponds to the Z direction.Here, the cross section shown in FIG. 2 is also referred to as an LTcross section. The cross section shown in FIG. 3 is also referred to asa WT cross section. The cross section shown in FIGS. 4A and 4B is alsoreferred to as an LW cross section.

As shown in FIGS. 1 to 4B, the multilayer body 10 includes a first mainsurface TS1 and a second main surface TS2 opposing each other in theheight direction T, a first side surface WS1 and a second side surfaceWS2 opposing each other in the width direction W perpendicular orsubstantially perpendicular to the height direction T, and a first endsurface LS1 and a second end surface LS2 opposing each other in thelength direction L perpendicular or substantially perpendicular to theheight direction T and the width direction W.

As shown in FIG. 1 , the multilayer body 10 has a rectangular orsubstantially rectangular parallelepiped shape. The dimension of themultilayer body 10 in the length direction L is not necessarily longerthan the dimension of the width direction W. The corners and ridges ofthe multilayer body 10 are preferably rounded. The corners are portionswhere the three surfaces of the multilayer body intersect, and theridges are portions where the two surfaces of the multilayer bodyintersect. Unevenness or the like may be provided on a portion or theentirety of the surface of the multilayer body 10.

The dimensions of the multilayer body 10 is not particularly limited.However, when the dimension in the length direction L of the multilayerbody 10 is defined as an L dimension, the L dimension is preferablyabout 0.2 mm or more and about 6 mm or less, for example. Furthermore,when the dimension in the height direction T of the multilayer body 10is defined as a T dimension, the T dimension is preferably about 0.05 mmor more and about 5 mm or less, for example. Furthermore, when thedimension in the width direction W of the multilayer body 10 is definedas a W dimension, the W dimension is preferably about 0.1 mm or more andabout 5 mm or less, for example.

As shown in FIGS. 2 and 3 , the multilayer body 10 includes an innerlayer portion 11, and a first main surface-side outer layer portion 12and a second main surface-side outer layer portion 13 that sandwich theinner layer portion 11 in the height direction T.

The inner layer portion 11 includes a plurality of dielectric layers 20and a plurality of internal electrode layers 30. The plurality ofdielectric layers 20 define and function as a plurality of ceramiclayers. The plurality of internal electrode layers 30 define andfunction as a plurality of internal conductive layers. The inner layerportion 11 includes, in the height direction T, from the internalelectrode layer 30 located closest to the first main surface TS1 to theinternal electrode layer 30 located closest to the second main surfaceTS2. In the inner layer portion 11, a plurality of internal electrodelayers 30 are opposed to each other with the dielectric layer 20interposed therebetween. The inner layer portion 11 generates acapacitance and defines and functions as a capacitor.

The plurality of dielectric layers 20 are each made of a dielectricmaterial. The dielectric material may be a dielectric ceramic includinga component such as, for example, BaTiO₃, CaTiO₃, SrTiO₃, or CaZrO₃.Furthermore, the dielectric material may be obtained by adding asecondary component such as, for example, a Mn compound, an Fe compound,a Cr compound, a Co compound, or a Ni compound to the main component.The dielectric material particularly preferably includes, for example,BaTiO₃ as a main component.

The thicknesses of the dielectric layers 20 are each preferably about0.2 μm or more and about 10 μm or less, for example. The number of thedielectric layers 20 to be laminated (stacked) is preferably fifteen ormore and 1200 or less, for example. The number of the dielectric layers20 refers to the total number of dielectric layers in the inner layerportion 11, and dielectric layers in the first main surface-side outerlayer portion 12 and the second main surface-side outer layer portion13.

The plurality of internal electrode layers 30 each include a firstinternal electrode layer 31 and a second internal electrode layer 32.The plurality of internal electrode layers 30 define and function asinternal conductive layers 30. The plurality of first internal electrodelayers 31 define and function as first internal conductive layers 31.The plurality of second internal electrode layers 32 define and functionas second internal conductive layers 32. The plurality of first internalelectrode layers 31 are each provided on the dielectric layer 20. Theplurality of second internal electrode layers 32 are each provided onthe dielectric layer 20. The plurality of first internal electrodelayers 31 and the plurality of second internal electrode layers 32 arealternately provided in the height direction T of the multilayer body 10with the dielectric layers 20 interposed therebetween. The firstinternal electrode layers 31 and the second internal electrode layers 32each sandwich the dielectric layers 20.

The first internal electrode layer 31 includes a first opposing portion31A which is opposed to the second internal electrode layer 32, and afirst extension portion 31B extending from the first opposing portion31A toward the first end surface LS1. The first extension portion 31B isexposed at the first end surface LS1.

The second internal electrode layer 32 includes a second opposingportion 32A which is opposed to the first internal electrode layer 31,and a second extension portion 32B extending from the second opposingportion 32A toward the second end surface LS2. The second extensionportion 32B is exposed at the second end surface LS2.

In the present preferred embodiment, the first opposing portion 31A andthe second opposing portion 32A are opposed to each other with thedielectric layers 20 interposed therebetween, such that a capacitance isgenerated, and the characteristics of a capacitor are provided.

The shapes of the first opposing portion 31A and the second opposingportion 32A are not particularly limited. However, they are preferablyrectangular or substantially rectangular, for example. However, thecorners of the rectangular shape may be rounded, or the corners of therectangular or substantially rectangular shape may be providedobliquely. The shapes of the first extension portion 31B and the secondextension portion 32B are not particularly limited. However, they arepreferably rectangular or substantially rectangular, for example.However, the corners of the rectangular or substantially rectangularshape may be rounded, or the corners of the rectangular or substantiallyrectangular shape may be provided obliquely.

The dimension in the width direction W of the first opposing portion 31Amay be the same or substantially same as the dimension in the widthdirection W of the first extension portion 31B, or either of them may besmaller. The dimension in the width direction W of the second opposingportion 32A may be the same or substantially same as the dimension inthe width direction W of the second extension portion 32B, or either ofthem may be smaller.

As shown in FIG. 4A, the first internal electrode layer 31 includes afirst side WE1 in the vicinity of the first side surface WS1, and asecond side WE2 in the vicinity of the second side WS2. As shown in FIG.4B, the second internal electrode layer 32 includes a third side WE3 inthe vicinity of the first side surface WS1 and a fourth side WE4 in thevicinity of the second side surface WS2.

The first internal electrode layer 31 and the second internal electrodelayer 32 are each made of an appropriate electrically conductivematerial including a metal such as, for example, Ni, Cu, Ag, Pd, and Au,and an alloy including at least one of these metals. When using analloy, the first internal electrode layer 31 and the second internalelectrode layer 32 may be made of, for example, a Ag—Pd alloy or thelike.

The thickness of each of the first internal electrode layers 31 and thesecond internal electrode layers 32 is preferably, for example, about0.2 μm or more and about 2.0 μm or less. The total number of the firstinternal electrode layers 31 and the second internal electrode layers 32is preferably fifteen or more and 1000 or less, for example.

The first main surface-side outer layer portion 12 is located in thevicinity of the first main surface TS1 of the multilayer body 10. Thefirst main surface-side outer layer portion 12 includes a plurality ofdielectric layers 20 located between the first main surface TS1 and theinternal electrode layer 30 closest to the first main surface TS1. Thedielectric layers 20 used in the first main surface-side outer layerportion 12 may be the same or substantially same as the dielectriclayers 20 used in the inner layer portion 11.

The second main surface-side outer layer portion 13 is located in thevicinity of the second main surface TS2 of the multilayer body 10. Thesecond main surface-side outer layer portion 13 includes a plurality ofdielectric layers 20 located between the second main surface TS2 and theinternal electrode layer 30 closest to the second main surface TS2. Thedielectric layers 20 used in the second main surface-side outer layerportion 13 may be the same or substantially same as the dielectriclayers 20 used in the inner layer portion 11.

As described above, the multilayer body 10 includes the plurality oflaminated dielectric layers 20 and the plurality of laminated internalelectrode layers 30 on the dielectric layers. In other words, themultilayer ceramic capacitor 1 includes the multilayer body 10 includingthe dielectric layers 20 and the internal electrode layers 30 which arealternately laminated therein.

The multilayer body 10 includes an opposing electrode portion 11E. Theopposing electrode portion 11E refers to a portion where the firstopposing portion 31A of the first internal electrode layer 31 and thesecond opposing portion 32A of the second internal electrode layer 32are opposed to each other. The opposing electrode portion 11E definesand functions as a portion of the inner layer portion 11. FIGS. 4A and4B each show the range of the opposing electrode portion 11E in thewidth direction W and in the length direction L. The opposing electrodeportion 11E is also referred to as a capacitor active portion.

The multilayer body 10 includes side surface-side outer layer portions.The side surface-side outer layer portions include a first sidesurface-side outer layer portion WG1 and a second side surface-sideouter layer portion WG2. The first side surface-side outer layer portionWG1 is a portion including the dielectric layer 20 located between theopposing electrode portion 11E and the first side surface WS1. Thesecond side surface-side outer layer portion WG2 is a portion includingthe dielectric layer 20 located between the opposing electrode portion11E and the second side surface WS2. FIGS. 3, 4A, and 4B each show theranges of the first side surface-side outer layer portion WG1 and thesecond side surface-side outer layer portion WG2 in the width directionW. The side surface-side outer layer portions are also each referred toas a W gap or a side gap.

The multilayer body 10 includes end surface-side outer layer portions.The end surface-side outer layer portions include a first endsurface-side outer layer portion LG1 and a second end surface-side outerlayer portion LG2. The first end surface-side outer layer portion LG1 isa portion including the dielectric layer 20 located between the opposingelectrode portion 11E and the first end surface LS1. The second endsurface-side outer layer portion LG2 is a portion including thedielectric layer 20 located between the opposing electrode portion 11Eand the second end surface LS2. FIGS. 2, 4A, and 4B each show the rangesin the length directions L of the first end surface side outer layerportion LG1 and the second end surface side outer layer portion LG2. Theend surface-side outer layer portion is also each referred to as an Lgap or an end gap.

The external electrodes 40 include a first external electrode 40Aprovided in the vicinity of the first end surface LS1 and a secondexternal electrode 40B provided in the vicinity of the second endsurface LS2.

The first external electrode 40A is provided on the first end surfaceLS1. The first external electrode 40A is connected to the first internalelectrode layer 31. The first external electrode 40A may be provided ona portion of the first main surface TS1 and a portion of the second mainsurface TS2, and also on a portion of the first side surface WS1 and aportion of the second side surface WS2. In the present preferredembodiment, the first external electrode 40A extends from the first endsurface LS1 to a portion of the first main surface TS1 and to a portionof the second main surface TS2, and to a portion of the first sidesurface WS1 and to a portion of the second side surface WS2.

The second external electrode 40B is provided on the second end surfaceLS2. The second external electrode 40B is connected to the secondinternal electrode layers 32. The second external electrodes 40B may beprovided on a portion of the first main surface TS1 and a portion of thesecond main surface TS2, and also on a portion of the first side surfaceWS1 and a portion of the second side surface WS2. In the presentpreferred embodiment, the second external electrode 40B extends from thesecond end surface LS2 to a portion of the first main surface TS1 and toa portion of the second main surface TS2, and to a portion of the firstside surface WS1 and a portion of the second side surface WS2.

As described above, in the multilayer body 10, the capacitance isgenerated by the first opposing portions 31A of the first internalelectrode layers 31 and the second opposing portions 32A of the secondinternal electrode layers 32 opposing each other with the dielectriclayers 20 interposed therebetween. Therefore, characteristics of thecapacitor are provided between the first external electrode 40A to whichthe first internal electrode layers 31 are connected and the secondexternal electrode 40B to which the second internal electrode layers 32are connected.

The first external electrode 40A includes a first base electrode layer50A and a first plated layer 60A provided on the first base electrodelayer 50A.

The second external electrode 40B includes a second base electrode layer50B and a second plated layer 60B provided on the second base electrodelayer 50B.

The first base electrode layer 50A is provided on the first end surfaceLS1. The first base electrode layer 50A is connected to the firstinternal electrode layers 31. In the present preferred embodiment, thefirst base electrode layer 50A extends from the first end surface LS1 toa portion of the first main surface TS1 and to a portion of the secondmain surface TS2, and to a portion of the first side surface WS1 and toa portion of the second side surface WS2.

The second base electrode layer 50B is provided on the second endsurface LS2. The second base electrode layer 50B is connected to thesecond internal electrode layers 32. In the present preferredembodiment, the second base electrode layer 50B extends from the secondend surface LS2 to a portion of the first main surface TS1 and to aportion of the second main surface TS2, and to a portion of the firstside surface WS1 and to a portion of the second side surface WS2.

The first base electrode layer 50A and the second base electrode layer50B of the present preferred embodiment are, for example, fired layers.It is preferable that the fired layers each include both a metalcomponent, and either a glass component or a ceramic component, or boththe glass component and the ceramic component. The metal componentincludes, for example, at least one selected from Cu, Ni, Ag, Pd, Ag—Pdalloys, Au, and the like. The glass component includes, for example, atleast one selected from B, Si, Ba, Mg, Al, Li, and the like. As theceramic component, the same or substantially same ceramic material asthat of the dielectric layer 20 may be used, or a different ceramicmaterial may be used. Ceramic components include, for example, at leastone selected from BaTiO₃, CaTiO₃, (Ba, Ca)TiO₃, SrTiO₃, CaZrO₃, and thelike.

The fired layer is obtained by, for example, applying an electricallyconductive paste including glass and metal to a multilayer body andfiring it. The fired layer may be obtained by simultaneously firing alaminate chip including the internal electrodes and the dielectriclayers and an electrically conductive paste applied to the laminatechip, or obtained by firing the laminate chip including the internalelectrodes and the dielectric layers to obtain a multilayer body,following which the multilayer body is coated with an electricallyconductive paste, and subjected to firing. In a case of simultaneouslyfiring the laminate chip including the internal electrodes and thedielectric layers, it is preferable that the fired layer is formed byfiring a material to which a ceramic material, instead of glasscomponent is added. In this case, it is particularly preferable to use,as the ceramic material to be added, the same or substantially same typeof ceramic material as the dielectric layer 20. Furthermore, the firedlayer may include a plurality of layers.

The thickness in the length direction of the first base electrode layer50A located in the vicinity of the first end surface LS1 is preferably,for example, about 3 μm or more and about 200 μm or less at the middleportion in the height direction T and the width direction W of the firstbase electrode layer 50A.

The thickness in the length direction s of the second base electrodelayer 50B located in the vicinity of the second end surface LS2 ispreferably, for example, about 3 μm or more and about 200 μm or less atthe middle portion of the height direction T and the width direction Wof the second base electrode layer 50B.

When providing the first base electrode layer 50A to at least one ofportions of the first main surface TS1 and the second main surface TS2,the thickness in the height direction of the first base electrode layer50A provided at this portion is preferably about 3 μm or more and about25 μm or less at the middle portion in the length direction L and thewidth direction W of the first base electrode layer 50A provided at thisportion, for example.

When providing the first base electrode layer 50A to at least one ofportions of the first side surface WS1 and the second side surface WS2,the thickness in the width direction of the first base electrode layer50A provided at this portion is preferably about 3 μm or more and about25 μm or less at the middle portion in the length direction L and theheight direction T of the first base electrode layer 50A provided atthis portion, for example.

When providing the second base electrode layer 50B to at least one ofportions of the first main surface TS1 and the second main surface TS2,the thickness in the height direction of the second base electrode layer50B provided at this portion is preferably about 3 μm or more and about25 μm or less at the middle portion in the length direction L and thewidth direction W of the second base electrode layer 50B provided atthis portion, for example.

When providing the second base electrode layer 50B to at least one ofportions of the first side surface WS1 and the second side surface WS2,the thickness in the width direction of the second base electrode layer50B provided at this portion is preferably about 3 μm or more and about25 μm or less at the middle portion in the length direction L and theheight direction T of the second base electrode layer 50B provided atthis portion, for example.

The first base electrode layer 50A and the second base electrode layer50B are not limited to the fired layers. The first base electrode layer50A and the second base electrode layer 50B may include, for example, atleast one selected from a fired layer, an electrically conductive resinlayer, a thin film layer, or other layers. For example, the first baseelectrode layer 50A and the second base electrode layer 50B each may bea thin film layer. The thin film layer may be formed by, for example, athin film forming method such as a sputtering method or a depositionmethod. The thin film layer may be a layer of, for example, about 10 μmor less on which metal particles are deposited.

The first plated layer 60A covers the first base electrode layer 50A.

The second plated layer 60B covers the second base electrode layer 50B.

The first plated layer 60A and the second plated layer 60B may eachinclude, for example, at least one selected from Cu, Ni, Sn, Ag, Pd, aAg—Pd alloy, Au, and the like. The first plated layer 60A and the secondplated layer 60B may each include a plurality of layers. The firstplated layer 60A and the second plated layer 60B each preferablyinclude, for example, a two-layer structure including a Sn plated layeron a Ni plated layer.

The first plated layer 60A covers the first base electrode layer 50A. Inthe present preferred embodiment, the first plated layer 60A includes,for example, a first Ni plated layer 61A, and a first Sn plated layer62A provided on the first Ni plated layer 61A.

The second plated layer 60B covers the second base electrode layer 50B.In the present preferred embodiment, the second plated layer 60Bincludes, for example, a second Ni plated layer 61B, and a second Snplated layer 62B provided on the second Ni plated layer 61B.

The Ni plated layer prevents the first base electrode layer 50A and thesecond base electrode layer 50B from being eroded by solder whenmounting the multilayer ceramic capacitor 1. Furthermore, the Sn platedlayer improves the wettability of the solder when mounting themultilayer ceramic capacitor 1. This facilitates the mounting of themultilayer ceramic capacitor 1. The thickness of each of the Ni firstplated layer 61A, the first Sn plated layer 62A, the second Ni platedlayer 61B, and the second Sn plated layer 62B is preferably, forexample, about 2 μm or more and about 10 μm or less.

The first external electrode 40A and the second external electrode 40Bof the present preferred embodiment may each include an electricallyconductive resin layer including electrically conductive particles and athermosetting resin, for example. When the electrically conductive resinlayer is provided as the first base electrode layer 50A and the secondbase electrode layer 50B, the electrically conductive resin layer maycover the fired layer, or may be provided directly on the multilayerbody 10 without providing the fired layer. If the electricallyconductive resin layer covers the fired layer, the electricallyconductive resin layer is disposed between the fired layer and theplated layer, or between the first plated layer 60A and the secondplated layer 60B. The electrically conductive resin layer may completelycover the fired layer or may cover a portion of the fired layer.

The electrically conductive resin layer including a thermosetting resinis more flexible than an electrically conductive layer made of, forexample, a plated film or a fired product of an electrically conductivepaste. Therefore, even when an impact caused by physical shock orthermal cycle is applied to the multilayer ceramic capacitor 1, theelectrically conductive resin layer defines and functions as a bufferlayer. Therefore, the electrically conductive resin layer reduces orprevents the occurrence of cracking in the multilayer ceramic capacitor1.

Metals of the electrically conductive particles may be, for example, Ag,Cu, Ni, Sn, Bi or alloys including them. The electrically conductiveparticle preferably includes Ag, for example. The electricallyconductive particle is a metal powder of Ag, for example. Ag is suitableas an electrode material because of its lowest resistivity among metals.In addition, since Ag is a noble metal, it is not likely to be oxidized,and weatherability thereof is high. Therefore, the metal powder of Ag issuitable as the electrically conductive particle.

Furthermore, the electrically conductive particle may be a metal powdercoated on the surface of the metal powder with Ag. When using thosecoated with Ag on the surface of the metal powder, the metal powder ispreferably, for example, Cu, Ni, Sn, Bi, or an alloy powder thereof. Inorder to make the metal of the base material inexpensive while keepingthe characteristics of Ag, it is preferable to use a metal powder coatedwith Ag, for example.

Furthermore, the electrically conductive particle may be formed by, forexample, subjecting Cu and Ni to an oxidation prevention treatment.Furthermore, the electrically conductive particle may be, for example, ametal powder coated with Sn, Ni, and Cu on the surface of the metalpowder. When using those coated with Sn, Ni, and Cu on the surface ofthe metal powder, the metal powder is preferably, for example, Ag, Cu,Ni, Sn, Bi, or an alloy powder thereof.

The shape of the electrically conductive particle is not particularlylimited. For the electrically conductive particle, a spherical metalpowder, a flat metal powder, or the like can be used. However, it ispreferable to use a mixture of a spherical metal powder and a flat metalpowder.

The electrically conductive particles included in the electricallyconductive resin layer mainly ensure the conductivity of theelectrically conductive resin layer. Specifically, by a plurality ofelectrically conductive particles being in contact with each other, anenergization path is provided inside the electrically conductive resinlayer.

The resin of the electrically conductive resin layer may include, forexample, at least one selected from a variety of known thermosettingresins such as epoxy resin, phenolic resin, urethane resin, siliconeresin, polyimide resin, and the like. Among those, epoxy resin isexcellent in heat resistance, moisture resistance, adhesion, etc., andthus is one of the more preferable resins. Furthermore, it is preferablethat the resin of the electrically conductive resin layer includes acuring agent together with a thermosetting resin. When epoxy resin isused as a base resin, the curing agent for the epoxy resin may bevarious known compounds such as, for example, phenols, amines, acidanhydrides, imidazoles, active esters, and amide-imides.

The electrically conductive resin layer may include a plurality oflayers. The thickest portion of the electrically conductive resin layeris preferably about 10 μm or more and about 150 μm or less, for example.

The first plated layer 60A and the second plated layer 60B may beprovided directly on the multilayer body 10 without providing the firstbase electrode layer 50A and the second base electrode layer 50B. Thatis, the multilayer ceramic capacitor 1 may include the plated layer thatis directly electrically connected to the first internal electrode layer31 and the second internal electrode layer 32. In such a case, theplated layer may be provided after the catalyst is disposed on thesurface of the multilayer body 10 as a pretreatment.

Also in this case, the plated layer preferably includes a plurality oflayers. The lower plated layer and the upper plated layer preferablyinclude, respectively, at least one metal selected from Cu, Ni, Sn, Pb,Au, Ag, Pd, Bi or Zn, for example, or an alloy containing these metals,for example. It is more preferable that the lower plated layer isprovided using, for example, Ni with solder barrier performance. It ismore preferable that the upper plated layer is provided using Sn or Auwith favorable solder wettability. For example, when the first internalelectrode layer 31 and the second internal electrode layer 32 areprovided using Ni, it is preferable that the lower plated layer isprovided using Cu with a good bonding property with Ni. The upper platedlayer may be provided as necessary. The external electrode 40 mayinclude only the lower plated layer. The plated layer may include theupper plated layer as an outermost layer. Furthermore, another platedlayer may be provided on the surface of the upper plated layer.

The thickness per layer of the plated layer without the base electrodelayer is preferably about 2 μm or more and about 10 μm or less, forexample. The plated layer preferably does not include glass. The metalratio per unit volume of the plated layer is preferably about 99% byvolume or more, for example.

When the plated layer is provided directly on the multilayer body 10, itis possible to reduce the thickness of the base electrode layer.Therefore, it is possible to reduce the dimension in the heightdirection T of the multilayer ceramic capacitor 1 by the amount obtainedby reducing the thickness of the base electrode layer. As a result, itis possible to reduce the height of the multilayer ceramic capacitor 1.Alternatively, it is possible to increase the thickness of thedielectric layer 20 sandwiched between the first internal electrodelayer 31 and the second internal electrode layer 32 by the amountcorresponding to a reduction in the thickness of the base electrodelayer. As a result, it is possible to improve the thickness of theelement body. Thus, by providing the plated layer directly on themultilayer body 10, it is possible to improve the design freedom of themultilayer ceramic capacitor.

When the dimension in the length direction of the multilayer ceramiccapacitor 1 including the multilayer body 10 and the external electrodes40 is defined as the L dimension, the L dimension is preferably about0.2 mm or more and about 6 mm or less, for example. Furthermore, whenthe dimension in the height direction of the multilayer ceramiccapacitor 1 is defined as the T dimension, the T dimension is preferablyabout 0.05 mm or more and about 5 mm or less, for example. Furthermore,when the dimension in the width direction of the multilayer ceramiccapacitor 1 is defined as the W dimension, the W dimension is preferablyabout 0.1 mm or more and about 5 mm or less, for example.

Here, the inventor of preferred embodiments of the present inventionrepeatedly conducted investigation, experiments, and simulations, andhave obtained knowledge that it is preferable to make the holes of theinternal electrode layer into an appropriate state in order to improvethe reliability of the multilayer ceramic capacitors. This will bedescribed below.

Conventionally, in order to increase the reliability of a multilayerceramic capacitor, various techniques have been used. For example,Japanese Unexamined Patent Application Publication No. 2018-46086discloses a multilayer ceramic capacitor including a multilayer body inwhich a plurality of dielectric layers and a plurality of internalelectrode layers are alternately stacked, and a plurality of auxiliaryelectrodes. In the multilayer ceramic capacitor of Japanese UnexaminedPatent Application Publication No. 2018-46086, providing a plurality ofauxiliary electrodes reduces or prevents electric field concentration,such that the reliability of the article is improved. However, themultilayer ceramic capacitor of Japanese Unexamined Patent ApplicationPublication No. 2018-46086 includes a plurality of auxiliary electrodes,and thus it is difficult to ensure the area of the capacitor effectiveportion that generates the capacitance. Therefore, it is difficult toincrease the reliability while reducing or preventing a decrease incapacitance.

In consideration of the above, the inventor of preferred embodiments ofthe present invention has intensively examined the structure of theinternal electrode layers capable of enhancing the reliability. As aresult, the inventor of preferred embodiments of the present inventionhas discovered that, according to the configuration of the presentpreferred embodiment, it is possible to reduce or prevent the electricfield concentration and to improve the reliability of the products whilereducing or preventing the lowering of the electrostatic capacitance.More specifically, the inventor of preferred embodiments of the presentinvention has discovered that the location where the holes in theinternal electrode layer are present is burned as a starting point atthe time of electrical breakdown occurrence of the multilayer ceramiccapacitor. Then, the inventor of preferred embodiments of the presentinvention has discovered that it is possible to reduce or prevent theelectric field concentration by increasing the abundance ratio of holesincluding ceramic pillars therein, particularly in holes having largearea equivalent diameter, among the plurality of holes existing in theinternal electrode layers. Hereinafter, the internal electrode layer 30of the present preferred embodiment will be described in detail.

FIG. 5 is an enlarged view of the V portion of the multilayer ceramiccapacitor 1 shown in FIG. 4A. FIG. 5 is a diagram exemplarily showing astate of the first internal electrode layer 31 as the internal electrodelayer 30. More specifically, FIG. 5 is a view of the internal electrodelayer 30 in the WT cross section of the multilayer ceramic capacitor 1of the present preferred embodiment, when viewed in the height directionT connecting the first main surface TS1 and the second main surface TS2,i.e., in a plan view. The coating state of the first internal electrodelayer 31 with respect to the dielectric layer 20, and the coating stateof the second internal electrode layer 32 with respect to the dielectriclayer 20 when viewed in the height direction T connecting the first mainsurface TS1 and the second main surface TS2, are the same orsubstantially same state. Therefore, in the following description, thefirst internal electrode layer 31 and the second internal electrodelayer 32 are collectively described as the internal electrode layer 30as necessary.

FIG. 5 is a diagram of the internal electrode layer 30 in the vicinityof the first side WE1 as a side of the internal electrode layer 30. Asshown in FIG. 5 , the internal electrode layer 30 includes a pluralityof holes H having different area equivalent diameters. The thickness ofthe internal electrode layer 30 shown in FIG. 5 is about 0.6 μm, and thecoverage of the internal electrode layer with respect to the dielectriclayer 20 is about 82%, for example.

FIG. 6 is a diagram showing area equivalent diameter distribution dataof the plurality of holes H existing in the internal electrode layer 30.FIG. 6 shows the cumulative percentage with respect to the areaequivalent diameter. The horizontal axis of FIG. 6 represents the areaequivalent diameters of the holes H. The vertical axis of FIG. 6represents the cumulative percentage showing the value obtained bydividing the number of holes H below its area equivalent diameter (thecumulative value of the number of holes) by the total number (the numberof holes of a population). That is, the area equivalent diameterdistribution data shown in FIG. 6 refers to the area equivalent diameterdistribution data of the number reference. The data in FIG. 6 is thearea equivalent diameter distribution data in the measurement targetregion in the vicinity of the side of the internal electrode layer 30.In other words, the data of FIG. 6 is data when holes existing in aregion wider than the region shown in FIG. 5 are used as a population.

In the multilayer ceramic capacitor 1 of the present preferredembodiment, when the area equivalent diameter in which the cumulativevalue in the cumulative distribution of the area equivalent diameters ofthe plurality of holes H existing in the internal electrode layer 30 isabout 99% is defined as the area equivalent diameter D99, the areaequivalent diameter D99 is preferably about 8.0 μm or less, for example.In the example of the area equivalent diameter distribution data shownin FIG. 6 , the area equivalent diameter D99 is about 4.4 μm, forexample.

Furthermore, when the area equivalent diameter in which the cumulativevalue in the cumulative distribution of the area equivalent diameters ofthe plurality of holes H existing in the internal electrode layer 30 isabout 90% is defined as the area equivalent diameter D90, the areaequivalent diameter D90 is preferably about 4.0 μm or less, for example.For example, in the area equivalent diameter distribution data of FIG. 6, the area equivalent diameter D90 is about 2.8 μm, for example. Thus,it is possible to reduce or prevent the electric field concentration,and increase the reliability of the products.

The area equivalent diameter refers to the value of the diameter of aperfect or substantially perfect circle with an area equal orsubstantially equal to the area of the hole defined by the hole profile.For example, when the area of the hole defined by the profile of thehole is about 50 μm², the area equivalent diameter is about 8.0 μm.

As described above, the area equivalent diameter D99 refers to the areaequivalent diameter in which the cumulative value in the cumulativedistribution of the area equivalent diameters of the plurality of holesis about 99%. That is, a value such that the ratio of the holes of thearea equivalent diameters below this is about 99% is referred to as thearea equivalent diameter D99. The area equivalent diameter D90 refers tothe area equivalent diameter in which the cumulative value in thecumulative distribution of the area equivalent diameters of theplurality of holes is about 90%. That is, a value such that the ratio ofthe holes of the area equivalent diameters below this is about 90% isreferred to as the area equivalent diameter D90. The area equivalentdiameter D50 is also called a median diameter. The area equivalentdiameter D50 refers to the area equivalent diameter in which thecumulative value in the cumulative distribution of the area equivalentdiameters of the plurality of holes is about 50%. That is, a value suchthat the ratio of the holes of the area equivalent diameters below thisis about 50% is referred to as the area equivalent diameter D50. Inother words, the area equivalent diameter D50 refers to the areaequivalent diameter such that, when dividing a plurality of holes H intotwo categories based on a certain area equivalent diameter as areference, the number of holes larger than the reference and the numberof holes smaller than the reference become the same or substantially thesame.

Here, in the present preferred embodiment of the present invention, theplurality of holes existing in the internal electrode layers includefirst holes including ceramic pillars therein, and second holes notincluding ceramic pillars therein. Furthermore, in the present preferredembodiment of the present invention, the abundance ratio of the firstholes in the first population including the holes having the areaequivalent diameter D90 or more is about 17% or more, for example. Here,for example, as a material for the ceramic pillars, the same orsubstantially the same ceramic material as that of the dielectric layer20 may be used. The dielectric material used for the dielectric layers20 and the ceramic pillars particularly preferably includes, forexample, BaTiO₃ as a main component. The same kind of secondarycomponents as those used in the dielectric layers 20 may be added to theceramic pillars. However, different secondary components may be added.The ceramic pillars may not fill all the holes. The second holes mayinclude a gap or void therein, or may include a glass component such assilica, for example.

The abundance ratio R1 of the first holes in the first population iscalculated by the following expression (1) based on the number of firstholes (N1) and the number of second holes (N2) in the first population.

R1=N1/(N1+N2)  (1)

Next, a description will be provided of how the above-describedadvantageous effects can be obtained using simulation.

First Simulation

FIG. 7A is a model of the internal electrode layer 30 used in the firstsimulation. In this model, the internal electrode layer 30 is providedon the dielectric layer 20. Furthermore, in this model, as shown in FIG.7A, the plurality of holes H are provided randomly. Furthermore, thearea equivalent diameters of the plurality of holes H includevariations. In this model, the plurality of holes H are provided in aperfect or substantially perfect circle. In this model, the internalelectrode layer 30 is provided in which a plurality of holes H areprovided randomly also on the back side of the dielectric layer 20,similarly to the surface side.

In the first simulation, a plurality of holes H are set in the internalelectrode layer 30 so that the area equivalent diameter D99 is about 8.0μm, for example. Furthermore, the thickness of the internal electrodelayer 30 is set to about 0.6 μm, the coverage of the internal electrodelayer 30 with respect to the dielectric layer 20 is set to about 88%,the thickness of the dielectric layer 20 is set to about 2.0 μm, and theapplied voltage is set to about 37.5 V, for example. In the simulation,a voltage is applied between the internal electrode layer 30 of thefront surface side and the internal electrode layer 30 of the backsurface side sandwiching the dielectric layer 20.

The simulation was performed under this setting condition, and it wasconfirmed that the electric field tends to concentrate around theprofiles of the holes H. FIG. 7B is a diagram of an electric fieldstrength distribution in the vicinity of the hole H. In FIG. 7B, theelectric field strength is shown in gray scale, and the lighter color isshown for higher electric field strength. FIG. 7B shows that theelectric field is concentrated around the hole H. It was also confirmedthat the electric field tends to be concentrated around the profile of arelatively large hole, such as that shown on the left side of FIG. 7B,rather than around the profile of a relatively small hole, such as thatshown on the right side of FIG. 7B.

The electric field strength generated in the model was calculated inthis setting condition. The result shows that a portion having a highelectric field strength is concentrated around the relatively large holeas described above. However, the value of the maximum electric fieldstrength in the model is less than about 72 MV/m. This value of themaximum electric field strength is an acceptable value in ensuring thereliability of the multilayer ceramic capacitor.

Next, using models in which the values of the area equivalent diameterD99 vary, the electric field strength generated in each model wascalculated. The thickness of the internal electrode layer 30, thecoverage of the internal electrode layer 30 with respect to thedielectric layer 20, the thickness of the dielectric layer 20, and theapplied voltage were set to constant values, and the simulation wasperformed. FIG. 8 is a graph showing the results. The horizontal axis ofFIG. 8 represents the value of the area equivalent diameter D99 in themodel. The vertical axis of FIG. 8 represents the maximum electric fieldstrength in the model. FIG. 8 shows an approximate curve obtained byfitting the plotted points.

First, it was confirmed that, as in the conventional internal electrodelayer 30, when holes of relatively large size are present, morespecifically, when the area equivalent diameter D99 of the plurality ofholes H existing in the internal electrode layer 30 is greater thanabout 8.0 μm, for example, the value of the maximum electric fieldstrength in the model is increased. For example, when the areaequivalent diameter D99 is about 14.0 μm or more, the value of themaximum electric field strength in the model exceeds about 80 MV/m. Morespecifically, when the area equivalent diameters D99 are about 14.0 μm,about 16.0 μm, about 18.0 μm, and about 20.0 μm, the maximum electricfield strengths in the models are, respectively, about 80.7 MV/m, about86.9 MV/m, about 87.5 MV/m, and 8 about 9.0 MV/m, and all of the maximumelectric field strengths exceed about 80 MV/m.

On the other hand, it was confirmed that, when the area equivalentdiameter D99 is about 8.0 μm or less, for example, the value of themaximum electric field strength generated in the model is lower thanabout 72 MV/m, such that the electric field concentration is reduced.For example, it was confirmed that, when the area equivalent diameterD99 is about 4.0 μm or about 2.0 μm, the maximum electric field strengthbecomes about 60 MV/m or less, and the concentration of the electricfield is further reduced. More specifically, for example, when the areaequivalent diameters D99 are about 8.0 μm, about 7.5 μm, about 4.0 μm,and about 2.0 μm, the maximum electric field strength are, respectively,about 70.7 MV/m, about 71.3 MV/m, about 56.0 MV/m, and about 52.0 MV/m,and thus are equal to or less than about 72 MV/m.

From the data of FIG. 8 , it can be confirmed that the electric fieldconcentration is reduced when the area equivalent diameter D99 is about2.0 μm or more and about 8.0 μm or less. In addition, when the areaequivalent diameter D99 is about 2.0 μm or more and about 4.0 μm orless, it can be confirmed that electric field concentration is furtherreduced. Furthermore, as a result of analyzing the tendency of the datain FIG. 8 , even when the area equivalent diameter D99 is about 2.0 μmor less, it is considered that the electric field concentration isreduced. For example, even when the area equivalent diameter D99 isabout 1.5 μm, it is considered that electric field concentration isreduced. For example, even when the area equivalent diameter D99 isabout 1.5 μm or more and about 8.0 μm or less, the electric fieldconcentration is considered to be reduced, and when the area equivalentdiameter D99 is about 1.5 μm or more and about 4.0 μm or less, theelectric field concentration is considered to be further reduced.

In this simulation, for example, the area equivalent diameter D90 of themodel in which the area equivalent diameter D99 is about 8.0 μm is about4.0 μm, the area equivalent diameter D90 of the model in which the areaequivalent diameter D99 is about 7.5 μm is about 3.8 μm, the areaequivalent diameter D90 of the model in which the area equivalentdiameter D99 is about 4.0 μm is about 2.6 μm, and the area equivalentdiameter D90 of the model in which the area equivalent diameter D99 isabout 2.0 μm is about 1.9 μm. The area equivalent diameter D90 ispreferably about 4.0 μm or less. The area equivalent diameter D90 ismore preferably about 2.6 μm or less. The area equivalent diameter D90is preferably about 1.9 μm or more and about 4.0 μm or less. The areaequivalent diameter D90 is more preferably about 1.9 μm or more andabout 2.6 μm or less.

Here, in order to confirm the presence or absence of the average holediameter dependence of the maximum electric field strength, asupplementary simulation using a model in which the average diametervaries was performed while fixing the area equivalent diameter D99 ofthe plurality of holes H existing in the internal electrode layer 30.More specifically, for example, a model was prepared in which the areaequivalent diameter D99 of the holes H was about 7.5 μm and the averagediameter of the holes H was about 3.0 μm, and a model was prepared inwhich the area equivalent diameter D99 of the holes H was about 7.5 μmand the average diameter of the holes H was about 2.0 μm. At this time,in both models, the coverage of the internal electrode layer 30 withrespect to the dielectric layer 20 was adjusted to be about 88%. In eachof the models, for example, the thickness of the internal electrodelayer 30 was set to about 0.6 μm, the thickness of the dielectric layer20 was set to about 2.0 μm, and the applied voltage was set to about37.5 V. As a result, the values of the maximum electric field strengthin both models were about 70 MV/m, and no difference was discovered.Thus, it was confirmed that the dependence of the average hole diameterwith respect to the maximum electric field strength is low.

From the above, it was confirmed that, for example, as the value of thearea equivalent diameter D99 or the value of the area equivalentdiameter D90 is smaller, the electric field concentration tends to bereduced or prevented. However, the average hole diameter dependence withrespect to the maximum electric field is low. Therefore, it is expectedthat the changes in the states of holes having large area equivalentdiameters highly contribute to the reduction in the maximum electricfield strength.

Second Simulation

Next, a second simulation according to the present preferred embodimentwill be described. In the second simulation, it was confirmed whether itis possible to reduce the electric field concentration by adjusting theabundance ratio of the ceramic pillars existing in the internalelectrode layer 30. More specifically, it was confirmed whether it ispossible to reduce or prevent the electric field concentration byadjusting the abundance ratio of the first holes when the plurality ofholes existing in the internal electrode layer 30 include the firstholes including ceramic pillars therein and the second holes notincluding ceramic pillars therein. Here, the ceramic pillars connect thedielectric layers 20 on one side and the other side of the internalelectrode layer 30.

Here, from the simulation results thus far, the change in the state ofthe holes having large area equivalent diameters is expected tocontribute to the reduction of the maximum electric field strength.Then, it was confirmed whether it was possible to reduce the maximumelectric field strength using the model in which the state of theabundance ratio of the ceramic pillars varies. More specifically, modelswere used in which the abundance ratio R1 of the first holes in thefirst population including holes having the area equivalent diameter D90or more when the area equivalent diameter in which the cumulative valuein the cumulative distribution of the area equivalent diameters of theplurality of holes existing in the internal electrode layer 30 is about90% is defined as the area equivalent diameter D90, and the electricfield strength generated in each model was calculated.

In the second simulation, the average value of the maximum electricfield strength generated in the vicinity of each hole of the firstpopulation in the model was calculated by setting the area equivalentdiameter D99 to about 7.5 μm, the thickness of the internal electrodelayer to about 0.6 μm, the coverage of the internal electrode layer tothe dielectric layer 20 to about 88%, the thickness of the dielectriclayer to about 2.0 μm, and the applied voltage to about 37.5 V. FIG. 9is a graph showing the results. The horizontal axis of FIG. 9 representsthe abundance ratio R1 of the first holes in the first populationincluding the holes having the area equivalent diameter D90 or more. Thevertical axis of FIG. 9 represents the average values of the maximumelectric field strengths generated in the vicinity of the holes of thefirst population. In this model, the material of the dielectric layers20 and the ceramic pillars is the same dielectric material, and thesecond holes not including the ceramic pillars therein include holeshaving area equivalent diameters smaller than the area equivalentdiameter D90.

The abundance ratio R1 of the first holes in the first populationincluding the holes having the area equivalent diameter D90 or more isdefined by the following equation (1) based on the first holes N1 andthe second holes N2 of the holes in the first population.

R1=N1/(N1+N2)  (1)

In other words, the abundance ratio R1 of the first holes is calculatedby dividing the number of the first holes N1 of the holes in the firstpopulation by the total number of the holes in the first population.

As shown in FIG. 9 , it was confirmed that, when the abundance ratio R1of the first holes of the holes in the first population was about 14% ormore, the average value of the maximum electric field strength generatedin the vicinity of each of the holes of the first population was belowabout 70 MV/m. For example, when the abundance ratio R1 of the firstholes was about 29% or more, the average value of the maximum electricfield strength was further lowered, such that the electric fieldconcentration was further reduced. Furthermore, when the abundance ratioR1 of the first holes was about 43% or more, the average value of themaximum electric field strength was further lowered, such that theelectric field concentration was further reduced. Furthermore, when theabundance ratio R1 of the first holes was about 71% or more, the averagevalue of the maximum electric field strength became about 60 MV/m, suchthat the electric field concentration was further reduced. Morespecifically, for example, the above-described average values of themaximum electric field strength when the abundance ratio R1 of the firstholes was about 14%, about 29%, about 43%, about 57%, about 71%, about86%, and about 100%, were respectively about 68.8 MV/m, about 66.3 MV/m,about 62.9 MV/m, about 61.7 MV/m, about 59.4 MV/m, about 6.9 MV/m, andabout 54.2 MV/m, and thus all of them were about 70 MV/m or less.

From the data of FIG. 9 , it can be confirmed that the electric fieldconcentration is reduced when the abundance ratio R1 of the first holesin the first population is about 14% or more and about 86% or less.Furthermore, it can be confirmed that the electric field concentrationis reduced when the abundance ratio R1 of the first holes in the firstpopulation is about 29% or more and about 86% or less. Furthermore, itcan be confirmed that the electric field concentration is furtherreduced when the abundance ratio R1 of the first holes in the firstpopulation is about 43% or more, about 57% or more, and about 71% ormore, for example. The abundance ratio R1 of the first holes in thefirst population may be about 86% or more. However, when taking intoaccount the productivity, the abundance ratio R1 of the first holes inthe first population may be about 86% or less, for example.

As described above, it was confirmed that, as the abundance ratio R1 ofthe first holes of the holes in the first population is higher, theelectric field concentration tends to be reduced. More specifically, forexample, when the abundance ratio R1 of the first holes in the firstpopulation is about 14% or more, it is possible to reduce the electricfield concentration. With such a configuration, it is possible toimprove the reliability of the multilayer ceramic capacitors.

Here, from the simulation results thus far, it is expected that thechanges in the states of holes having relatively large area equivalentdiameters highly contribute to the reduction in the maximum electricfield strength. Therefore, additional simulations using models in whichthe states of the abundance ratio of the ceramic pillars varied wereperformed. More specifically, a first model was prepared in which, whenthe area equivalent diameter in which the cumulative value in thecumulative distribution of the area equivalent diameters of theplurality of holes existing in the internal electrode layer is about 90%is defined as the area equivalent diameter D90, the abundance ratio ofthe first holes in the first population including holes having the areaequivalent diameter of the area equivalent diameter D90 or more is about80%, and the abundance ratio of the first holes in the second populationincluding holes having the area equivalent diameter smaller than thearea equivalent diameter D90 or more is about 100%. Furthermore, asecond model was prepared in which the abundance ratio of the firstholes in the first population including holes having the area equivalentdiameter of the area equivalent diameter D90 or more is about 100%, andthe abundance ratio of the first holes in the second populationincluding holes having the area equivalent diameter smaller than thearea equivalent diameter D90 or more is about 80%.

In the first model and the second model, the maximum electric fieldstrength generated in the model was confirmed by setting the areaequivalent diameter D99 to about 7.5 μm, the thickness of the internalelectrode layer to about 0.6 μm, the coverage of the internal electrodelayer to the dielectric layer to about 88%, the thickness of thedielectric layer to about 2.0 μm, and the applied voltage to about 37.5V. FIG. 10 is a graph showing the results. The vertical axis of FIG. 10represents a numerical value obtained by normalizing the maximumelectric field strength, i.e., the index number when the maximumelectric field strength in the first model is defined as 1.

As shown in FIG. 10 , the value of the maximum electric field strengthin the second model was confirmed to be lower than the value of themaximum field intensity in the first model. More specifically, it wasconfirmed that the value of the maximum electric field strength in thesecond model is lowered about 25% as compared with the value of themaximum electric field strength in the first model. That is, it wasconfirmed that the abundance ratio of the ceramic pillars in the holesin which the area equivalent diameter is relatively large contributes tothe reduction of the maximum electric field strength.

From the above, it was discovered that it is possible to further reducethe maximum electric field strength by making the abundance ratio of thefirst holes in the first population of the holes having the areaequivalent diameter D90 or more higher than the abundance ratio of thefirst holes in the second population of the holes having the areaequivalent diameter smaller than the area equivalent diameter D90. Withsuch a configuration, it is possible to improve the reliability of themultilayer ceramic capacitors.

Third Simulation

Next, a third simulation as an additional simulation will be described.In the third simulation, using models in which the coverage varies, theelectric field strength generated in each model was calculated. Here,the coverage refers to the coverage of the internal electrode layer 30with respect to the dielectric layer 20.

In the third simulation, the maximum electric field strength generatedin the model was confirmed by setting the area equivalent diameter D99to about 7.5 μm, the thickness of the internal electrode layer 30 toabout 0.6 μm, the thickness of the dielectric layer 20 to about 2.0 μm,and the applied voltage to about 37.5 V. FIG. 11 is a graph showing theresults. The horizontal axis of FIG. 11 represents the coverage of theinternal electrode layer 30 in the model, and the vertical axis of FIG.11 represents the maximum field strength in the model.

As shown in FIG. 11 , the dependence of the value of the maximumelectric field strength with respect to the value of the coverage hasnot been confirmed. More specifically, it was confirmed that the valueof the maximum electric field strength is less than about 72 MV/m whenthe coverage is 70% or more and 99% or less. For example, it wasconfirmed that the maximal field strength is less than about 72 MV/mwhen the coverage is about 70%, about 77%, about 82%, about 86%, about88%, about 93%, about 97%, and about 99%.

In order to ensure the capacitance, it is preferable that the coverageis higher. According to the third simulation, it can be confirmed that,even when the coverage is a relatively high value, for example, when thecoverage is about 70% or more and about 99% or less, the reliability ofthe products can be improved while reducing or preventing the reductionof the capacitance by using the configuration of the present preferredembodiment. In addition, it was confirmed that, even when the coverageis in the range of about 86% or more and about 93% or less, in which thecoverage is high and the productivity is also in the favorable range,the reliability of the products can be improved while reducing orpreventing the reduction of the capacitance by using the configurationof the present preferred embodiment.

In addition, the data of the third simulation shown in FIG. 11 is basedon the model in which the holes in the internal electrode layer 30 donot include ceramic pillars. However, the same or similar trend isobtained from the model in which the holes in the internal electrodelayer 30 include ceramic pillars. Varying the coverage does little tochange the maximum electric field strength.

Fourth Simulation

Next, a fourth simulation as an additional simulation will be described.In the fourth simulation, the electric field strength generated in eachmodel was calculated using models in which the thickness of the internalelectrode layer 30 varies.

In the fourth simulation, the maximum electric field strength generatedin the model was confirmed by setting the area equivalent diameter D99to about 7.5 μm, the coverage of the internal electrode layer 30 withrespect to the dielectric layer 20 to about 88%, the thickness of thedielectric layer 20 to about 2.0 μm, and the applied voltage to about37.5 V, for example. FIG. 12 is a graph showing the results. Thehorizontal axis of FIG. 12 represents the thickness of the internalelectrode layer 30 in the model. The vertical axis of FIG. 10 representsthe maximum field strength in the model.

As shown in FIG. 12 , the dependence of the value of the maximumelectric field strength with respect to the thickness of the internalelectrode layer 30 has not been confirmed. More specifically, it wasconfirmed that, when the thickness of the internal electrode layer 30 isabout 0.2 μm or more and about 2.0 μm or less, the value of the maximumelectric field strength is about 72 MV/m or less. For example, it wasconfirmed that, when the thickness of the internal electrode layer 30 isabout 0.2 μm, about 0.3 μm, about 0.6 μm, about 0.8 μm, about 1.0 μm,about 1.5 μm, and about 2.0 μm, the value of the maximum electric fieldstrength is less than about 72 MV/m or less.

By reducing the thickness of the internal electrode layer 30, it ispossible to increase the laminated number even in the multilayer bodyhaving the same or substantially same size, such that it is possible toensure the capacitance. With the fourth simulation, even when thethickness of the internal electrode layer 30 is thin, for example, evenwhen the thickness of the internal electrode layer 30 is about 0.2 μm ormore and about 2.0 μm or less, it still can be confirmed that, by usingthe configuration of the present preferred embodiment, it is possible toincrease the reliability of the products while reducing or preventing adecrease in the capacitance. From the data of FIG. 12 , it can beconfirmed that the thickness of the internal electrode layer 30 may beabout 0.2 μm or more and about 1.0 μm or less, about 0.2 μm or more andabout 0.8 μm or less, 0.2 μm or more and about 0.6 μm or less, or about0.2 μm or more and about 0.3 μm or less, for example.

The thickness of the internal electrode layer 30 may be smaller than thevalue of the area equivalent diameter D99 described above. For example,while the area equivalent diameter D99 is about 2.0 μm or more and about8.0 μm or less, the thickness of the internal electrode layer 30 may beless than about 2.0 μm. For example, while the area equivalent diameterD99 is about 1.5 μm or more and about 8.0 μm or less, the thickness ofthe internal electrode layer 30 may be about 0.8 μm or less. In thiscase, the area equivalent diameter D99 becomes a larger value than thedimension of the thickness of the internal electrode layer 30. When thearea equivalent diameter D99 is a predetermined value or less, and thedimension of the thickness of the internal electrode layer 30 is madesmaller than the value of the area equivalent diameter D99, it ispossible to reduce the electric field concentration while adopting aconfiguration that easily ensures the capacitance.

The thickness of the internal electrode layer 30 may be no more thanhalf of the value of the area equivalent diameter D99 described above.For example, while the area equivalent diameter D99 is about 2.0 μm ormore and about 8.0 μm or less, the thickness of the internal electrodelayer 30 may be about 0.8 μm or less. For example, while the areaequivalent diameter D99 is about 1.5 μm or more and about 8.0 μm orless, the thickness of the internal electrode layer 30 may be about 0.6μm or less. When the area equivalent diameter D99 is a predeterminedvalue or less, and the dimension of the thickness of the internalelectrode layer 30 is made to a size less than half the value of thearea equivalent diameter D99, it is possible to reduce the electricfield concentration while using a configuration that easily ensures thecapacitance.

The thickness of the internal electrode layer 30 may be smaller than thevalue of the area equivalent diameter D90 described above. In this case,the area equivalent diameter D90 is a larger value than the dimension ofthe thickness of the internal electrode layer 30. For example, the areaequivalent diameter D90 may be about 4.0 μm or less, about 3.8 μm orless, or about 2.6 μm or less, and the thickness of the internalelectrode layer 30 may be smaller than the value of the area equivalentdiameter D90. When the area equivalent diameter D90 is a predeterminedvalue or less, and the dimension of the thickness of the internalelectrode layer 30 is made smaller than the value of the area equivalentdiameter D90, it is possible to reduce the electric field concentrationwhile adopting a configuration that easily ensures the capacitance.

The thickness of the internal electrode layer 30 may be no more thanhalf of the value of the area equivalent diameter D90 described above.For example, the area equivalent diameter D90 may be about 4.0 μm orless, about 3.8 μm or less, or about 2.6 μm or less, and the thicknessof the internal electrode layer 30 may be no more than half of the areaequivalent diameter D90. When the area equivalent diameter D90 is apredetermined value or less, and the dimension of the thickness of theinternal electrode layer 30 is made to a size less than half the valueof the area equivalent diameter D90, it is possible to reduce theelectric field concentration while adopting a configuration that easilyensure the capacitance.

In addition, the data of the third simulation shown in FIG. 12 is basedon the model in which the holes in the internal electrode layer 30 donot include ceramic pillars. However, a similar trend is obtained fromthe model in which the holes in the internal electrode layer 30 includeceramic pillars. Varying the coverage does little to change the maximumelectric field strength.

Fifth Simulation

Next, a fifth simulation as an additional simulation will be described.In the fifth simulation, it was confirmed whether it is possible toreduce the electric field concentration by adjusting the shapes of theholes existing in the internal electrode layer 30.

The view on the left side of FIG. 13A is a model of the holes of theinternal electrode layer 30 used in the fifth simulation. In this model,the shapes of the plurality of holes differ from each other. The modelof the holes shown in FIG. 13A is modeled based on the profiles of theholes provided in a practically manufactured internal electrode layer30, as shown in the figure on the right side of FIG. 13A. In the fifthsimulation, the maximum field strength generated in the vicinity of eachof the six holes H1 to H6 in the model was confirmed by setting thethickness of the internal electrode layer to about 0.6 μm, the thicknessof the dielectric layer to about 2.0 μm, and the applied voltage toabout 37.5 V, for example. The area equivalent diameters of all the sixholes H1 to H6 were set to about 3.0 μm, for example.

First, as the shape index of the holes, the circularity of the holes iscalculated. The circularity of the hole H1 was about 0.456, thecircularity of the hole H2 was about 0.204, the circularity of the holeH3 was about 0.995, the circularity of the hole H4 was about 0.272, thecircularity of the hole H5 was about 0.321, and the circularity of thehole H6 was about 0.704.

Next, simulations were performed to confirm the maximum field strengthgenerated in the vicinity of each of the holes H1 to H6. FIG. 13B is adiagram showing, as an example, the electric field strength distributionin the vicinity of the hole H3 having a high degree of circularity, andthe electric field intensity distribution in the vicinity of the hole H5having a lower degree of circularity than the hole H3. In FIG. 13B, theelectric field strength is shown in gray scale, and the lighter color isshown for higher electric field strength. As shown in FIG. 13B, it wasconfirmed that the maximum electric field strength generated around theprofile of the hole H5 having a low circularity tends to be a lowervalue than the maximum electric field strength generated around theprofile of the hole H3 having a high circularity.

FIG. 14 is a graph of normalized plots of the values of the maximumfield strengths generated in the vicinity of the respective holes H1 toH6 with different circularity. The horizontal axis of FIG. 14 representsthe circularity of the hole. The vertical axis of FIG. 14 represents anumerical value obtained by normalizing the maximum electric fieldstrength, i.e., the index number when the maximum electric fieldstrength generated in the vicinity of the hole H3 having a perfect orsubstantially perfect circle is define as 1. FIG. 14 shows a straightline obtained by fitting the plotted points.

As shown in FIG. 14 , the value of the maximum electric field strengthwas confirmed to depend on the circularity of the hole. Morespecifically, it was confirmed that, as the circularity of the hole islower, the value of the maximum electric field strength is lower. Forexample, when the circularity of the hole is about 0.7 or less, ascompared with the case where the hole is a perfect or substantiallyperfect circle, the maximum electric field strength is reduced about15%. Furthermore, when the circularity is about 0.46 or less, themaximum electric field strength decreases about 30% as compared with thecase where the hole is a perfect or substantially perfect circle.

Thus, by lowering the circularity of the holes existing in the internalelectrode layer 30, a tendency that the electric field concentration ismore reduced was obtained.

Here, from the simulation results thus far, the circularity of the holehaving a relatively large area equivalent diameter is expected tocontribute to the reduction of the maximum electric field strength.Then, it was confirmed whether it was possible to reduce the maximumelectric field strength using the model in which the distribution of thecircularity varies. More specifically, a third model was prepared inwhich, when the area equivalent diameter in which the cumulative valuein the cumulative distribution of the area equivalent diameters of theplurality of holes H existing in the internal electrode layer 30 isabout 90% is defined as the area equivalent diameter D90, the averagevalue of the circularity of the holes having the area equivalentdiameter of the area equivalent diameter D90 or more is about 0.99, andthe average value of the circularity of the holes having the areaequivalent diameter smaller than the area equivalent diameter D90 isabout 0.59. Furthermore, a fourth model was prepared in which, when thearea equivalent diameter in which the cumulative value in the cumulativedistribution of the area equivalent diameters of the plurality of holesH existing in the internal electrode layer is 90% is defined as the areaequivalent diameter D90, the average value of the circularity of theholes having the area equivalent diameter D90 or more is about 0.59, andthe average value of the circularity of the holes having the areaequivalent diameter smaller than the area equivalent diameter D90 wasabout 0.99.

In the third model and the fourth model, the maximum electric fieldstrength generated in the model was confirmed by setting the areaequivalent diameter D99 to about 7.5 μm, the thickness of the internalelectrode layer to about 0.6 μm, the coverage of the internal electrodelayer to the dielectric layer to about 88%, the thickness of thedielectric layer to about 2.0 μm, and the applied voltage to about 37.5V, for example. FIG. 15 is a graph showing the results. The verticalaxis of FIG. 15 represents a numerical value obtained by normalizing themaximum electric field strength, i.e., the index number when the maximumelectric field strength in the third model is defined as 1.

As shown in FIG. 15 , the value of the maximum electric field strengthin the fourth model was confirmed to be lower than the value of themaximum field intensity in the third model. More specifically, it wasconfirmed that the value of the maximum electric field strength in thefourth model is lowered about 25% as compared with the value of themaximum electric field strength in the third model. That is, it wasconfirmed that the circularity of the holes in which the area equivalentdiameter is relatively large particularly contributes to the reductionof the maximum electric field strength.

From the above, it was discovered that it is possible to further reducethe maximum electric field strength by lowering the circularity of thehole having the area equivalent diameter D90 or more and setting theaverage value thereof to about 0.7 or less. In other words, it ispossible to further reduce the maximum electric field strength bysetting the average value of the circularity of the plurality of holesin the first population of the holes having the area equivalent diameterequal to or larger than the area equivalent diameter D90 to about 0.7 orless. Thus, it is possible to further improve the reliability of themultilayer ceramic capacitor. More preferably, the average value of thecircularity of the holes having the area equivalent diameter D90 or moreis about 0.46 or less, for example. Thus, it is possible to furtherreduce the maximum electric field strength. Therefore, it is possible tofurther increase the reliability of the multilayer ceramic capacitor.The average value of the circularity of the holes having the areaequivalent diameter D90 or more may be about 0.2 or more and about 0.7or less, or may be about 0.2 or more and about 0.46 or less, forexample.

In addition, the data of the third simulation shown in FIGS. 13B to 15is based on the model in which the holes in the internal electrode layer30 do not include ceramic pillars. However, the same or similar trend isobtained from the model in which the holes in the internal electrodelayer 30 include ceramic pillars. Varying the coverage does little tochange the maximum electric field strength.

Hereinafter, a non-limiting example of a method of measuring variousparameters will be described. The method of measuring various parameterscan be confirmed by the following method.

First, a measurement target region for measuring parameters such as thearea equivalent diameter D99, the area equivalent diameter D90, theabundance ratio of the first holes having ceramic pillars therein, andthe average value of the circularity will be described.

Here, the inventor of preferred embodiments of the present inventionrepeatedly conducted investigation, experiments, and simulations, andhave obtained knowledge, in particular, that it is preferable to makethe holes in a predetermined region of the internal electrode layer intoan appropriate state in order to improve the reliability of multilayerceramic electronic components such as the multilayer ceramic capacitors.More specifically, the inventor of preferred embodiment of the presentinvention repeatedly performed the analysis or the like after theaccelerated life test of the multilayer ceramic capacitors, and haveobtained knowledge that the burned position at the time of electricalbreakdown of the multilayer body of the multilayer ceramic capacitor isoften located in a region which is in the vicinity of the sidesurface-side outer layer portion and slightly away from the side (endportion) of the internal electrode layer, such that it is preferable tomake the hole in this region an appropriate state.

FIG. 16 is an image of a scanning electron microscope (SEM)corresponding to the enlarged view in the WT cross section of the XVIportion of the multilayer ceramic capacitor shown in FIG. 3 , and is adiagram showing a burned state at the time of electrical breakdown ofthe multilayer body 10 when subjected to an accelerated life test. Thus,in the multilayer ceramic capacitor 1, a burned point D of themultilayer body 10 is likely to occur in a region which is in thevicinity of the side surface-side outer layer portion WG and slightlyaway from the side of the internal electrode layer 30.

Therefore, it is preferable to set the plurality of holes H of theinternal electrode layer 30 in this region to an appropriate state.Furthermore, it is preferable that the above-mentioned measurementtarget region is set in a region which is in the vicinity of the sidesurface-side outer layer portion WG and is slightly away from the sideof the internal electrode layer 30.

More specifically, it is preferable to set a first region A1, a secondregion A2, a third region A3, and a fourth region A4 in the firstinternal electrode layer 31 as the measurement target regions. The firstregion A1 is defined as a region from a position about 10 μm away fromthe first side WE1 to a position about 50 μm away from the first sideWE1. The second region A2 is defined as a region from a position about10 μm away from the second side WE2 to a position about 50 μm away fromthe second side WE2. The third region A3 is defined as a region from aposition about 10 μm away from the third side to a position about 50 μmaway from the third side. The fourth region A4 is defined as a regionfrom a position about 10 μm away from the fourth side to a positionabout 50 μm away from the fourth side. When the linearity of the firstside WE1 to the fourth side WE4 is low, each side is defined as astraight line by linear fitting according to linear regression, suchthat the first region A1 to the fourth region A4 are defined, forexample.

FIG. 4A schematically shows the first region A1 and the second region A2as measuring target regions. FIG. 4B schematically shows the thirdregion A3 and the fourth region A4 as the measuring target regions.

Furthermore, in the first region A1, the second region A2, the thirdregion A3, and the fourth region A4 as the measurement target regions,parameters such as the area equivalent diameter D99, the area equivalentdiameter D90, the abundance ratio of the first holes, and the averagevalue of the circularity are measured. Here, the measurement isperformed by observing the three-dimensional structure using the FIB-SEMmethod for the purpose of simultaneously measuring the abundance ratioof the first holes having ceramic pillars therein.

More specifically, first, the multilayer ceramic capacitor iscross-sectionally polished to about 20 μm before the position of about ½in the L dimension, to expose a particular WT cross-section.

Then, the observation of the three-dimensional structure using theFIB-SEM method is performed with the internal electrode layer 30 of theabove-described measurement target regions (the first region A1 to thefourth region A4) as a target. Here, the observation of thethree-dimensional structure is performed at the middle portion of themultilayer body 10 in the stacking direction T. Furthermore, theobservation of the three-dimensional structure is performed at theportion corresponding to the above-described measurement target regionof the multilayer body 10 in the width direction W, i.e., the portion inthe vicinity of the side of the internal electrode layer 30, forexample. Furthermore, the observation of the three-dimensional structureis performed at the middle portion of the multilayer body 10 in thelength direction, for example. FIGS. 4A and 4B each show the observationranges b1 and b2 for which the observation of the three-dimensionalstructure in the width direction W and the length direction L isperformed.

In relation to the size of the observation range for which theobservation of the three-dimensional structure is performed, the lengthin the height direction T is set to the length including six layers ofthe internal electrode layers 30, for example. The length in the widthdirection W is set to about 40 μm, for example. The length in the lengthdirection L is set to about 40 μm, for example.

In the observation of the three-dimensional structure, the processing bythe FIB (Focused Ion Beam) and the acquisition of a SEM image arealternately repeated. The processing step of the FIB processing is setto about 0.4 μm, for example. The processing direction of the FIBprocessing is set in the length direction L, for example. The number ofprocessing steps of the FIB processing is set to 100 times, for example.A plurality of consecutive cross-sectional SEM images in the lengthdirection L acquired in this way are three-dimensionally reconstructedby image processing to prepare three-dimensionally reconstructed data.In addition, it is possible to generate any cross sections and volumerendering displays, for example, based on the three-dimensionallyreconstructed data prepared in this way.

The observation range b1 includes three layers of the first internalelectrode layers 31 at a portion of the first region A1. Furthermore,the observation range b1 includes three layers of the second internalelectrode layers 32 at a portion of the third region A3. The observationrange b2 includes three layers of the first internal electrode layers 31at a portion of the second region A2. Furthermore, the observation rangeb2 includes three layers of the second internal electrode layers 32 at aportion of the fourth region A4.

Therefore, based on the observation range b1, the three locations of theanalysis target range in the first region A1 of the first internalelectrode layer 31 are set. Based on the observation range b1, the threelocations of the analysis target range in the third region A3 of thesecond internal electrode layer are set. Based on the observation rangeb2, the three locations of the analysis target range in the secondregion A2 of the first internal electrode layer 31 are set. Based on theobservation range b2, the three locations of the analysis target rangein the fourth region A4 of the second internal electrode layer are set.

The measurement target range in which various parameters are measured isset by a set of 12 analysis target ranges in total of 4 regions×3locations.

When the chip size of the multilayer ceramic electronic component islarge, the observation of the three-dimensional structure with theobservation range b1 as a target, and the observation of thethree-dimensional structure with the observation range b2 as a targetmay be performed separately. When the chip size of the multilayerceramic electronic component is small, a single observation of thethree-dimensional structure may cover the observation range b1 and theobservation range b2. When the chip size of the multilayer ceramicelectronic component is particularly small, the first region A1 to thefourth region A4 may be set to positions overlapping each other. Inother words, the observation range b1 and the observation range b2 maybe set to positions overlapping each other. In this case, a singleobservation of the three-dimensional structure that covers theobservation range b1 and the observation range b2 is performed.

Method of Measuring Area Equivalent Diameters D99 and D90

A non-limiting example of a method of measuring the area equivalentdiameters D99 and D90 of the holes existing in the internal electrodelayer 30 will be described.

Based on the three-dimensionally reconstructed data obtained by theFIB-SEM method, the profiles of the individual holes provided in theinternal electrode layer 30 are identified. Thereafter, for each holeprovided in the internal electrode layer 30, the area equivalentdiameter of the hole is calculated based on the area of the hole definedby the profile of the hole. The area equivalent diameter refers to thevalue of the diameter of a perfect or substantially perfect circle withan area equal or substantially equal to the area of the hole defined bythe hole profile.

The area equivalent diameters of the individual holes are calculated forthe twelve analysis target ranges a of the measurement target range.Here, when the area of the holes is less than about 1.0 μm², noise maybe generated instead of the holes. Therefore, in order to exclude theinfluence of noise, in the subsequent analysis, noise is excluded fromthe analysis target.

The measurement target range, i.e., a set of all the holes identified inthe analysis target ranges at 12 locations (excluding those in which thearea of the holes is less than about 1.0 μm²), is set as a population ofholes.

The area equivalent diameter D99 and the area equivalent diameter D90are calculated based on the data of the area equivalent diameters of thepopulation of holes in the measurement target range. The area equivalentdiameter D99 is calculated as the area equivalent diameter in which thecumulative value in the cumulative distribution of the number basis ofthe area equivalent diameters of the plurality of holes existing in themeasurement target area is about 99%. The area equivalent diameter D90is calculated as the area equivalent diameter in which the cumulativevalue in the cumulative distribution of the number basis of the areaequivalent diameters of the plurality of holes existing in themeasurement target area is about 90%.

In addition, a WL cross section in a plan view of the internal electrodelayer 30 in the height direction T may be prepared as an arbitrary crosssection based on the three-dimensionally reconstructed data, and theprofiles of the individual holes provided in the internal electrodelayer 30 may be identified based on the WL cross section in the planview of the internal electrode layer 30 to calculate subsequentparameters. Alternatively, pre-programmed processing may be performedsuch that the profiles of the individual holes provided in the internalelectrode layer 30 are automatically identified based on thethree-dimensionally reconstructed data to calculate the subsequentparameters.

Method of Measuring Abundance Ratio of Ceramic Pillars

A non-limiting example of a method of measuring the abundance ratio ofthe first holes including ceramic pillars therein will be described.More specifically, when the plurality of holes existing in the internalelectrode layer 30 include the first holes including ceramic pillarstherein connecting the dielectric layers 20 on one side and the otherside of the internal electrode layer 30 and the second holes notincluding ceramic pillars therein, the abundance ratio of the firstholes is measured according to the following method. More specifically,when the area equivalent diameter in which the cumulative value in thecumulative distribution of the area equivalent diameters of theplurality of holes H existing in the internal electrode layer 30 is 90%is defined as the area equivalent diameter D90, the abundance ratio R1of the first holes including ceramic pillars therein among the holeshaving an area equivalent diameter larger than the area equivalentdiameter D90 is measured according to the following method.

Based on the three-dimensionally reconstructed data obtained by theFIB-SEM method, the profiles of the individual holes provided in theinternal electrode layer 30 are identified. Thereafter, for each holeprovided in the internal electrode layer 30, the area equivalentdiameter of the hole is calculated based on the area of the hole definedby the profile of the hole. Furthermore, based on thethree-dimensionally reconstructed data, individual holes are identifiedas the first holes including ceramic pillars therein, and the secondholes not including ceramic pillars.

The area equivalent diameters of the individual holes are calculated forthe twelve analysis target ranges of the measurement target range. Here,when the area of the holes is less than about 1.0 μm², noises may begenerated instead of the holes. Therefore, in order to exclude theinfluence of the noise, in the subsequent analysis, the noise isexcluded from the analysis target.

The measurement target range, i.e., a set of all the holes identified inthe analysis target ranges at 12 locations (excluding those in which thearea of the holes is less than about 1.0 μm) is set as a population ofholes.

The population of the holes existing in the measurement target region isdivided into the first population including the holes having the areaequivalent diameter D90 or more, and the second population including theholes having an area equivalent diameter smaller than the areaequivalent diameter D90. Then, the number of the first holes and thenumber of the second holes are counted for each of the first populationand the second population.

The abundance ratio R1 of the first holes in the first populationincluding the holes having the area equivalent diameter D90 or more isdefined by the following equation (1) based on the first holes N1 andthe second holes N2 of the holes in the first population.

R1=N1/(N1+N2)  (1)

In other words, the abundance ratio R1 of the first holes in the firstpopulation is calculated by dividing the number of the first holes N1 ofthe holes in the first population by the total number of the holes inthe first population.

The abundance ratio R2 of the first holes in the second populationincluding the holes having an area equivalent diameter smaller than thearea equivalent diameter D90 is defined by the following equation (2)based on the first holes N3 and the second holes N4 of the holes in thesecond population.

R2=N3/(N3+N4)  (2)

In other words, the abundance ratio R2 of the first holes in the secondpopulation is calculated by dividing the number of the first holes N3 ofthe holes in the second population by the total number of the holes inthe second population.

Method of Measuring Circularity of Holes

A non-limiting example of a method of measuring the circularity of theholes existing in the internal electrode layer 30 will be described.

Based on the three-dimensionally reconstructed data obtained by theFIB-SEM method, the profiles of the individual holes provided in theinternal electrode layer 30 are identified. Thereafter, for each holeprovided in the internal electrode layer 30, the area equivalentdiameter of the hole is calculated based on the area of the hole definedby the profile of the hole. The area equivalent diameter refers to thevalue of the diameter of a perfect or substantially perfect circle withan area equal to the area of the hole defined by the hole profile.

The area equivalent diameters of the individual holes are calculated forthe twelve analysis target ranges a of the measurement target range.Here, when the area of the holes is less than about 1.0 μm², noise maybe generated instead of the holes. Therefore, in order to exclude theinfluence of noise, in the subsequent analysis, noise is excluded fromthe analysis target.

The measurement target range, i.e., a set of all the holes identified inthe analysis target ranges at 12 locations (excluding those in which thearea of the holes is less than about 1.0 μm²), is set as a population ofholes.

For each hole in the population of holes, the circularity of the holesis calculated by the following expression (3) based on the area of thehole and the length of the circumference defined by the profile of thehole.

Circularity=4π×(Area)/(Circumference length)²  (3)

Furthermore, the population of the holes existing in the measurementtarget region is divided into a first population including holes havingan area equivalent diameter equal to or larger than the area equivalentdiameter D90, and a second population including holes having an areaequivalent diameter smaller than the area equivalent diameter D90.Furthermore, the average value of the circularity of the plurality ofholes in the first population including the holes having the areaequivalent diameter equal to or larger than the area equivalent diameterD90 is calculated. This is defined as the average value of thecircularity of the plurality of holes in the first population of thepresent preferred embodiment of the present invention.

Method of Measuring Coverage

A non-limiting example of a method for measuring the coverage as thecoverage of the internal electrode layer 30 with respect to thedielectric layer 20 will be described.

Based on the three-dimensionally reconstructed data obtained by theFIB-SEM method, the region of the internal electrode layer 30 coveringthe dielectric layer 20 in the analysis target range is identified.Thereafter, based on the area of the analysis target range and the areaof the region of the internal electrode layer 30, the coverage of theinternal electrode layer 30 with respect to the dielectric layer 20 iscalculated by the following expression (4).

Coverage (%)=(Area of internal electrode layer/Area of analysis targetrange)×100  (4)

For the twelve analysis target ranges of the measurement target range,the coverage of the internal electrode layer 30 with respect to thedielectric layer 20 is calculated. Then, the average value is defined asthe coverage of the internal electrode layer 30 with respect to thedielectric layer 20 of the present preferred embodiment of the presentinvention.

In addition, a WL cross section in a plan view of the internal electrodelayer 30 in the height direction T may be prepared as an arbitrary crosssection based on the three-dimensionally reconstructed data, and thecoverage of the internal electrode layer 30 with respect to thedielectric layer 20 may be calculated based on the WL cross section inthe plan view of the internal electrode layer 30. Alternatively,pre-programmed processing may be performed such that the coverage of theinternal electrode layer 30 with respect to the dielectric layer 20 isautomatically calculated based on the three-dimensionally reconstructeddata.

Method of Measuring Thickness of Internal Electrode Layer

A non-limiting example of a method of measuring the thickness of theplurality of internal electrode layers 30 will be described.

First, the multilayer ceramic capacitor is cross-sectionally polished toabout 20 μm before the position of about ½ in the L dimension, to exposea particular WT cross-section. Then, the WT cross section of themultilayer body 10 which is exposed by polishing is observed by the SEM.

Next, the thicknesses of the internal electrode layer 30 are measured ona total of five lines including a center line passing through the centeror approximate center of the cross section of the multilayer body 10along the stacking direction, and two lines drawn at equal orsubstantially equal intervals on both sides from the center line. Here,the thicknesses of the internal electrode layer 30 at the five locationsare measured in each of the three portions in the stacking direction ofthe multilayer body 10. Then, the average value of the thicknesses ofthe internal electrode layer 30 of a total of 15 locations of the threeportions×the 5 locations, is defined as the thickness of the internalelectrode layer 30 in the present preferred embodiment of the presentinvention.

Next, a non-limiting example of a method of manufacturing the multilayerceramic capacitor 1 of the present preferred embodiment of the presentinvention will be described.

A dielectric sheet for the dielectric layer 20 and an electricallyconductive paste for the internal electrode layer 30 are provided. Theelectrically conductive paste for the dielectric sheet and the internalelectrode includes a binder and a solvent. For example, known bindersand solvents may be used.

On the dielectric sheet, an electrically conductive paste for theinternal electrode layer 30 is printed in a predetermined pattern by,for example, screen printing or gravure printing. Thus, the dielectricsheet in which the pattern of the first internal electrode layer 31 isformed, and the dielectric sheet in which the pattern of the secondinternal electrode layer 32 is formed are prepared.

By a predetermined number of dielectric sheets in which the pattern ofthe internal electrode layer is not printed being laminated, a portiondefining and functioning as the first main surface-side outer layerportion 12 in the vicinity of the first main surface TS1 is formed. Ontop of that, the dielectric sheets in which the pattern of the firstinternal electrode layer 31 is printed, and the dielectric sheets inwhich the pattern of the second internal electrode layer 32 is printedare sequentially laminated, such that a portion serving as the innerlayer portion 11 is formed. On this portion serving as the inner layerportion 11, a predetermined number of dielectric sheets in which thepattern of the internal electrode layer is not printed are laminated,such that a portion serving as the second main surface-side outer layerportion 13 in the vicinity of the second main surface TS2 is formed.Thus, a laminated sheet is produced.

The laminated sheet is pressed in the height direction by hydrostaticpressing, for example, such that a laminated block is produced.

The laminated block is cut to a predetermined size, such that laminatechips are cut out. At this time, corners and ridges of the laminate chipmay be rounded by barrel polishing or the like.

The laminate chip is fired to produce the multilayer body 10. The firingtemperature depends on the materials of the dielectric layers 20 and theinternal electrode layers 30, but is preferably about 900° C. or moreand about 1400° C. or less.

Here, in order to set the area equivalent diameter D99 of the holesexisting in the internal electrode layer 30 to a predetermined value orless, for example, about 8.0 μm or less, about 7.5 μm or less, or about4.0 μm or less, and in order for the area equivalent diameter D99 of theholes existing in the internal electrode layer 30 to fall within apredetermined range, the above-described manufacturing conditions areadjusted.

More specifically, the pressure, the temperature, and the pressing timeat the time of lamination of the dielectric sheet on which the patternof the internal electrode layer 30 is printed, are adjusted, such thatthe area equivalent diameter D99 of the holes existing in the internalelectrode layer 30 is adjusted to be equal to or less than apredetermined value. For example, when the internal electrode layer 30is relatively thin, the pressure at the time of pressing the laminatesheet is set to higher.

Furthermore, the material of the electrically conductive paste for theinternal electrode layer 30 may be prepared in order to set the areaequivalent diameter D99 of the holes existing in the internal electrodelayer 30 to a predetermined value or less. For example, when the maincomponent of the internal electrode layer 30 is Ni, particles of largeraverage particle size are used as Ni particles as a raw material of theelectrically conductive paste, such that the bonding start temperaturebetween Ni particles and the sintering shrinkage start temperature ofthe ceramic can be brought closer together. As a result, the internalelectrode layer 30 is restrained from balling, and the area equivalentdiameter D99 is adjusted to be equal to or less than a predeterminedvalue. Furthermore, when the same ceramic powder as the ceramic powderincluded in the dielectric layer 20 is added as a co-material to theelectrically conductive paste for the internal electrode layer 30, thebonding initiation temperature between Ni particles and the sinteringshrinkage initiation temperature of the ceramic can be brought closertogether by using a co-material having a larger average particlediameter. As a result, the internal electrode layer 30 is restrainedfrom balling, and the area equivalent diameter D99 is adjusted to beequal to or less than a predetermined value. Furthermore, by controllingthe Ni particles of the electrically conductive paste for the internalelectrode layer 30, the co-material, and the affinity between thesolvents, the co-material dispersibility may be increased. As a result,the internal electrode layer 30 is restrained from balling, and the areaequivalent diameter D99 of the holes is adjusted to be equal to or lessthan a predetermined value.

Furthermore, the laminate chips may be provided densely side by sideduring firing, such that the uniformity of the temperature in the chipsduring firing is improved. As a result, the internal electrode layer 30is restrained from balling, and the area equivalent diameter D99 isadjusted to be equal to or less than a predetermined value. Furthermore,by firing the laminate chips in a state embedded in the ceramic powder,the uniformity of the temperature inside and outside of the chips duringfiring may be enhanced. As a result, the internal electrode layer 30 isrestrained from balling, and the area equivalent diameter D99 isadjusted to be equal to or less than a predetermined value. At the timeof firing, the temperatures of portions in the vicinity of the firstside surface and the second side surface of the laminate chip, forexample, the side in the vicinity of the first side surface WS1 and theside of the second side surface WS2 of the internal electrode layer 30,tend to rise. Therefore, the internal electrode layer 30 tends to beballed in these portions. However, according to the above-describedmethod, balling is reduced or prevented in the first to fourth regionsA1 to A4 of the internal electrode layer 30, such that the areaequivalent diameter D99 of the holes existing in the internal electrodelayer 30 can be set to a predetermined value or less.

By forming the internal electrode layer 30 by, for example, two-stageprinting, the internal electrode layer 30 may be provided such that thearea equivalent diameter D99 of the holes existing in at least theportions in the vicinity of the first side surface and the second sidesurface of the laminate chip, for example, in the first portion A1 tothe fourth region A4 is equal to or smaller than a predetermined value.In this case, an electrically conductive paste including Ni particleshaving a large average particle size and a co-material having a largeaverage particle size is printed on at least the first region A1 to thefourth region A4. Then, the electrically conductive paste including theNi particles having a relatively small average particle size and theco-material having a relatively small average size is printed on theother regions including the central region of the internal electrodelayer 30. As a result, the area equivalent diameter D99 of the holesexisting in at least the first to fourth regions A1 to A4 can be set toa predetermined value or less.

The above-described method of setting the area equivalent diameter D99of the holes existing in the internal electrode layer 30 to apredetermined value or less can be appropriately combined. Thus, thearea equivalent diameter D99 of the holes existing in the internalelectrode layer 30 can be set to a predetermined value or less, forexample, about 8.0 μm or less, about 7.5 μm or less, or about 4.0 μm orless, or can be adjusted within a predetermined range. Similarly, by theabove-described method, the area equivalent diameter D90 of the holesexisting in the internal electrode layer 30 can be adjusted to be equalto or less than, for example, about 8.0 μm or less, about 7.5 μm orless, or about 4.0 μm or less, or can be adjusted within a predeterminedrange.

Here, the material of the electrically conductive paste for the internalelectrode layer 30 may be prepared in order for the ceramic pillars tobe easily provided in the plurality of holes existing in the internalelectrode layer 30. For example, an electrically conductive paste withan increased amount of a co-material is used, for example. Thisincreases the discharge amount of the co-material to the holes.Furthermore, an electrically conductive paste with finer atomization ofa co-material and higher addition of the co-material may be used, forexample. This increases the discharge amount of the co-material to theholes. In this way, the increase in the discharge amount of theco-material to the holes improves the probability of the generation ofceramic pillars. Furthermore, by increasing the pressure during pressingof the laminated sheet, particularly in the area where the conductivepaste coating is thin near the end portion of the internal electrodelayer 30, portions where the top and bottom ceramic sheets sandwichingthe conductive paste are brought close together are generated, andportions where the continuity of the conductive paste is partiallybroken are generated, for example. During firing, the internal electrodelayer 30 is interrupted in the portions, and the material of the ceramicsheet enters the interruption, which facilitates the generation ofceramic pillars, particularly in large holes equal to or larger thanD90. In other words, it is possible to improve the abundance ratio ofthe first holes including ceramic pillars in the large holes having D90or more.

By forming the internal electrode layer 30 by, for example, two-stageprinting, the abundance ratio of the first holes including ceramicpillars therein may be improved in the holes existing in at least theportions in the vicinity of the first side surface and the second sidesurface of the laminate chip, for example, in the first portion A1 tothe fourth region A4. In this case, an electrically conductive pastehaving an increased amount of the co-material is printed on at least thefirst region A1 to the fourth region A4. Then, the electricallyconductive paste having a relatively small amount of the co-material isprinted on the other regions including the central region of theinternal electrode layer 30. As a result, it is possible to improve theabundance ratio of the first holes including ceramic pillars thereinamong the holes existing in at least the first to fourth regions A1 toA4.

The material of the electrically conductive paste for the internalelectrode layer 30 may be prepared in order to set the degree ofcircularity of the plurality of holes existing in the internal electrodelayer 30 to a predetermined value or less, for example, to set theaverage value of the degree of circularity of the holes having the areaequivalent diameter D90 or more to about 0.7 or less, or to about 0.46or less. For example, when the main component of the internal electrodelayer 30 is Ni, particles having variations in particle size may be usedas Ni particles as a raw material of the electrically conductive paste.As a result, a hole having an irregular shape in which a plurality ofsmall holes are connected is formed, such that the degree of circularityof the larger hole can be reduced. Furthermore, when the same ceramicpowder as the ceramic powder included in the dielectric layer 20 isadded as a co-material, a co-material having a variation in particlediameter may be used as the co-material. As a result, a hole having anirregular shape in which a plurality of small holes are connected isformed, such that the degree of circularity of the larger hole can bereduced. By using these methods, the average value of the circularity ofthe holes having the area equivalent diameter D90 or more can be set toa predetermined value or less.

By forming the internal electrode layer 30 by, for example, two-stageprinting, the internal electrode layer 30 may be provided such that thedegree of circularity of the holes existing in at least the portions inthe vicinity of the first side surface and the second side surface ofthe laminate chip, for example, in the first portion A1 to the fourthregion A4, is equal to or smaller than a predetermined value. In thiscase, an electrically conductive paste including Ni particles havingvarious particle sizes and a co-material having various particle sizesis printed on at least the first region A1 to the fourth region A4.Then, the electrically conductive paste including the Ni particleshaving various particle sizes and the co-material having variousparticle sizes is printed on the other regions including the centerregion of the internal electrode layer 30. As a result, the averagevalue of the circularity of the holes having the area equivalentdiameter D90 or more of the holes existing at least in the first tofourth regions A1 to A4 can be set to a predetermined value or less. Inaddition, by using such a method, the internal electrode layer 30 may beprovided such that the average value of the circularity of the holesexisting in the first to fourth regions A1 to A4 is lower than theaverage value of the circularity of the holes existing in the centerregion of the internal electrode layer 30.

The electrically conductive paste defining and functioning as baseelectrode layer (the first base electrode layer 50A and the second baseelectrode layer 50B) is applied to both end surfaces of the multilayerbody 10. In the present preferred embodiment, the base electrode layeris fired layers. An electrically conductive paste including a glasscomponent and metal is applied to the multilayer body 10 by, forexample, a method such as dipping. Thereafter, a firing process isperformed to form the base electrode layer. The temperature of thefiring process at this time is preferably about 700° C. or higher andabout 900° C. or lower, for example.

In a case in which the laminate chip before firing and the electricallyconductive paste applied to the laminate chip are fired simultaneously,it is preferable that the fired layer is formed by firing a layer towhich a ceramic material is added, instead of a glass component. At thistime, it is particularly preferable to use, as the ceramic material tobe added, the same type of ceramic material as the dielectric layer 20.In this case, an electrically conductive paste is applied to thelaminate chip before firing, and the laminate chip and the electricallyconductive paste applied to the laminate chip are fired simultaneously,such that the multilayer body 10 including a fired layer formed thereinis formed.

Thereafter, the plated layer is formed on the surface of the baseelectrode layer. In the present preferred embodiment of the presentinvention, the first plated layer 60A is formed on the first baseelectrode layer 50A. The second plated layer 60B is formed on the secondbase electrode layer 50B. In the present preferred embodiment of thepresent invention, the Ni plated layer and the Sn plated layer areformed as the plated layer. Upon performing the plating process,electrolytic plating or electroless plating may be used. However, theelectroless plating has a disadvantage in that a pretreatment with acatalyst or the like is necessary in order to improve the platingdeposition rate, and thus the process is complicated. Therefore,normally, electrolytic plating is preferably used. The Ni plated layerand Sn the plated layer are sequentially formed, for example, by barrelplating.

In a case in which the base electrode layer is formed with a thin filmlayer, such a thin film layer as the base electrode layer is formed at aportion where the external electrode is to be formed by, for example,performing masking or the like. The thin film layer is formed by a thinfilm forming method such as, for example, a sputtering method or adeposition method. The thin film layer is, for example, a layer of about1.0 μm or less on which metal particles are deposited.

When the electrically conductive resin layer is provided as the baseelectrode layer, the electrically conductive resin layer may cover thefired layer, or may be provided directly on the multilayer body 10without providing the fired layer. When the electrically conductiveresin layer is provided, an electrically conductive resin pasteincluding, for example, a thermosetting resin and a metal component isapplied onto the fired layer or the multilayer body 10, and thenheat-treated at a temperature of about 250° C. to about 550° C. orhigher. As a result, the thermosetting resin is thermally cured to forman electrically conductive resin layer. The atmosphere at the time ofthis heat treatment is preferably, for example, an N2 atmosphere.Furthermore, in order to prevent scattering of the resin and to preventoxidation of various metal components, the oxygen concentration ispreferably about 100 ppm or less, for example.

The plated layer may be provided directly on the exposed portion of theinternal electrode layer 30 of the multilayer body 10 without providingthe base electrode layer. In this case, a plating process is performedon the first end surface LS1 and the second end surface LS2 of themultilayer body 10 such that a plated layer is provided on the exposedportion of the internal electrode layer 30. Upon performing the platingprocess, electrolytic plating or electroless plating may be used.However, the electroless plating has a disadvantage in that apretreatment with a catalyst or the like is necessary in order toimprove the plating deposition rate, and thus the process becomescomplicated. Therefore, normally, electrolytic plating is preferablyused. It is preferable to use, for example, barrel plating for theplating method. Furthermore, the upper plated layer provided on thesurface of the lower plated layer may be provided as necessary by thesame or substantially the same method as the lower plated layer.

By such a manufacturing process, the multilayer ceramic capacitor 1 ismanufactured.

The configuration of the multilayer ceramic capacitor 1 is not limitedto the configuration shown in FIGS. 1 to 4B. For example, the multilayerceramic capacitor 1 may include a two-portion structure, a three-portionstructure, or a four-portion structure as shown in FIGS. 17A to 17C.

The multilayer ceramic capacitor 1 shown in FIG. 17A is a multilayerceramic capacitor 1 including a two-portion structure. The multilayerceramic capacitor 1 includes, as the internal electrode layer 30, afloating internal electrode layer 35 which does not extend to eitherside of the first end surface LS1 and the second end surface LS2, inaddition to the first internal electrode layer 33 and the secondinternal electrode layer 34. The multilayer ceramic capacitor 1 shown inFIG. 17B includes a three-portion structure including, as the floatinginternal electrode layer 35, a first floating internal electrode layer35A and a second floating internal electrode layer 35B. The multilayerceramic capacitor 1 shown in FIG. 17C includes a four-portion structureincluding, as the floating internal electrode layer 35, the firstfloating internal electrode layer 35A, the second floating internalelectrode layer 35B and a third floating internal electrode layer 35C.Thus, by providing the floating internal electrode layer 35 as theinternal electrode layer 30, the multilayer ceramic capacitor 1 includesa structure in which the opposing electrode portion is divided into aplurality of opposing electrode portions. With such a configuration, aplurality of capacitor components are provided between the opposinginternal electrode layers 30, such that a configuration in which thesecapacitor components are connected in series is provided. Therefore, thevoltage applied to the respective capacitor components becomes low, andthus, it is possible to achieve a high breakdown voltage of themultilayer ceramic capacitor 1. The multilayer ceramic capacitor 1 ofthe present preferred embodiment may be a multiple-portion structure offour or more parts.

The multilayer ceramic capacitor 1 may be of two-terminal multilayerceramic capacitor including two external electrodes, or may be ofmulti-terminal multilayer ceramic capacitor including a large number ofexternal electrodes.

In the preferred embodiment of the present invention described above,the multilayer ceramic capacitor in which the dielectric layers 20 madeof dielectric ceramic is used as a ceramic layer is exemplified as themultilayer ceramic electronic component. However, multilayer ceramicelectronic components according to preferred embodiments of the presentinvention are not limited thereto. For example, ceramic electroniccomponents according to preferred embodiments of the present inventionare also applicable to a piezoelectric component using piezoelectricceramic as a ceramic layer, and various multilayer ceramic electroniccomponents such as a thermistor using semiconductor ceramic as a ceramiclayer. Examples of the piezoelectric ceramic include PZT (lead zirconatetitanate) ceramic and the like. Examples of the semiconductor ceramicinclude spinel ceramic and the like.

According to multilayer ceramic electronic components of the presentpreferred embodiment of the present invention, the followingadvantageous effects are obtained.

(1) The multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention includes themultilayer body 10 including the plurality of stacked ceramic layers 20,the plurality of internal conductive layers 30 stacked on the ceramiclayers 20, the first main surface TS1 and the second main surface TS2opposing each other in the height direction, the first side surface WS1and the second side surface WS2 opposing each other in the widthdirection perpendicular or substantially perpendicular to the heightdirection, and the first end surface LS1 and the second end surface LS2opposing each other in the length direction perpendicular orsubstantially perpendicular to the height direction and the widthdirection, and the external electrodes 40 each connected to the internalconductive layers 30. The internal conductive layers 30 each include aplurality of holes each having a different area equivalent diameter. Theplurality of holes include first holes including ceramic pillars thereinand second holes not including ceramic pillars therein. The ceramicpillars connect ceramic layers 20 on one side and one another side ofthe internal conductive layers 30. When an area equivalent diameter inwhich a cumulative value in a cumulative distribution of area equivalentdiameters of the plurality of holes existing in each of the internalconductive layers 30 is about 90% is defined as an area equivalentdiameter D90, an abundance ratio of the first holes in a firstpopulation including holes each having the area equivalent diameter D90or more is about 14% or more. With such a configuration, it is possibleto provide multilayer ceramic electronic components that can reduce orprevent electric field concentration.

(2) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, an abundanceratio of the first holes in a first population including holes eachhaving the area equivalent diameter D90 or more is about 29% or more.With such a configuration, it is possible to reduce or prevent theelectric field concentration.

(3) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, an abundanceratio of the first holes in a first population including holes eachhaving the area equivalent diameter D90 or more is about 14% or more andabout 86% or less. With such a configuration, it is possible to reduceor prevent the electric field concentration.

(4) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, an abundanceratio of the first holes in a first population including holes eachhaving the area equivalent diameter D90 or more is about 29% or more andabout 86% or less. With such a configuration, it is possible to reduceor prevent the electric field concentration.

(5) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, an abundanceratio of the first holes in a first population including holes havingthe area equivalent diameter D90 or more is higher than an abundanceratio of the first holes in a second population including holes eachhaving an area equivalent diameter smaller than the area equivalentdiameter D90. With such a configuration, it is possible to reduce orprevent the electric field concentration effectively.

(6) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment, the coverage of the internal conductivelayer 30 with respect to the ceramic layer 20 is about 70% or more andabout 99% or less. With such a configuration, it is possible to increasethe reliability of the products while reducing or preventing thedecrease in capacitance.

(7) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment, the coverage of the internal conductivelayer 30 with respect to the ceramic layer 20 is about 86% or more andabout 93% or less. With such a configuration, it is possible to increasethe reliability of the products while reducing or preventing thedecrease in capacitance.

(8) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment, the internal conductive layers 30 eachinclude the thickness of about 0.2 μm or more and about 2.0 μm or less.With such a configuration, it is possible to reduce or prevent electricfield concentration while adopting a configuration which easily ensuresthe capacitance.

(9) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment, the internal conductive layers 30 eachinclude the thickness of about 0.2 μm or more and about 0.3 μm or less.With such a configuration, it is possible to reduce or prevent electricfield concentration while adopting a configuration which easily ensuresthe capacitance.

(10) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, the areaequivalent diameter D90 of the plurality of holes existing in theinternal conductive layer 30 is about 4.0 μm or less. With such aconfiguration, it is possible to reduce or prevent the electric fieldconcentration.

(11) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, the areaequivalent diameter D90 of the plurality of holes existing in theinternal conductive layer 30 is about 1.9 μm or more and about 4.0 μm orless. With such a configuration, it is possible to reduce or prevent theelectric field concentration.

(12) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, a thickness ofeach of the internal conductive layers 30 is smaller than the areaequivalent diameter D90. With such a configuration, it is possible toreduce the electric field concentration while using a configuration thateasily ensures the capacitance.

(13) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, a thickness ofeach of the internal conductive layers 30 is no more than half of thearea equivalent diameter D90. With such a configuration, it is possibleto reduce the electric field concentration while using a configurationthat easily ensures the capacitance.

(14) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, an average valueof a circularity of the plurality of holes in the first population ofholes each having the area equivalent diameter D90 or more is about 0.7or less. With such a configuration, the electric field concentration isfurther reduced.

(15) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, an average valueof a circularity of the plurality of holes in the first population ofholes each having the area equivalent diameter D90 or more is about 0.46or less. With such a configuration, the electric field concentration isfurther reduced.

(16) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, an average valueof a circularity of the plurality of holes in the first population ofholes each having the area equivalent diameter D90 or more is about 0.2or more and about 0.7 or less. With such a configuration, the electricfield concentration is further reduced.

(17) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, an average valueof a circularity of the plurality of holes in the first population ofholes each having the area equivalent diameter D90 or more is about 0.2or more and about 0.46 or less. With such a configuration, the electricfield concentration is further reduced.

(18) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, when an areaequivalent diameter in which a cumulative value in a cumulativedistribution of area equivalent diameters of the plurality of holesexisting in each of the internal conductive layers becomes 99% isdefined as an area equivalent diameter D99, the area equivalent diameterD99 of the plurality of holes existing in the internal conductive layer30 is about 8.0 μm or less. With such a configuration, it is possible toreduce or prevent the electric field concentration.

(19) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, the areaequivalent diameter D99 of the plurality of holes existing in theinternal conductive layer 30 is about 3.2 μm or less. With such aconfiguration, it is possible to reduce or prevent the electric fieldconcentration.

(20) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, the areaequivalent diameter D99 of the plurality of holes existing in theinternal conductive layer 30 is about 2.0 μm or more and about 8.0 μm orless. With such a configuration, it is possible to reduce or prevent theelectric field concentration.

(21) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention, the areaequivalent diameter D99 of the plurality of holes existing in theinternal conductive layer 30 is about 2.0 μm or more and about 4.0 μm orless. With such a configuration, it is possible to reduce or prevent theelectric field concentration.

(22) In the multilayer ceramic electronic component 1 according to thepresent preferred embodiment, the multilayer ceramic electroniccomponent 1 according to the present preferred embodiment includes thefollowing configuration. The external electrodes 40 include the firstexternal electrode 40A in the vicinity of the first end surface LS1 andthe second external electrode 40B in the vicinity of the second endsurface LS2. The plurality of internal conductive layers 30 include theplurality of first internal conductive layers 3 which are electricallyconnected to the first external electrode 40A, and the plurality ofsecond internal conductive layers which are electrically connected tothe second external electrode 40B. The first internal conductive layers31 each include the first side WE1 in the vicinity of the first sidesurface WS1 and the second side WE2 in the vicinity of the second sidesurface WS2. The second internal conductive layers 32 each include thethird side WE3 in the vicinity of the first side surface WS1 and thefourth side WE4 in the vicinity of the second side surface WS2. In thefirst internal conductive layers 31, the first region A1 is defined as aregion from a position about 10 μm away from the first side WE1 to aposition about 50 μm away from the first side WE1, the second region A2is defined as a region from a position about 10 μm away from the secondside WE2 to a position about 50 μm away from the second side WE2, thethird region A3 is defined as a region from a position about 10 μm awayfrom the third side to a position about 50 μm away from the third side,the fourth region A4 is defined as a region from a position about 10 μmaway from the fourth side to a position about 50 μm away from the fourthside. When the holes existing in the first region A1, the second regionA2, the third region A3, and the fourth region A4 are defined as apopulation of the holes, the area equivalent diameter D90 is an areaequivalent diameter in which a cumulative value in a cumulativedistribution of the area equivalent diameters of the holes in thepopulation of the holes is about 90%. With such a configuration, it ispossible to provide multilayer ceramic electronic components with highreliability that reduce or prevent electric field concentration.

(23) The multilayer ceramic electronic component 1 according to thepresent preferred embodiment of the present invention includes themultilayer body 10 including the plurality of stacked ceramic layers 20,the plurality of internal conductive layers 30 stacked on the ceramiclayers 20, the first main surface TS1 and the second main surface TS2opposing each other in the height direction, the first side surface WS1and the second side surface WS2 opposing each other in the widthdirection perpendicular or substantially perpendicular to the heightdirection, and the first end surface LS1 and the second end surface LS2opposing each other in the length direction perpendicular orsubstantially perpendicular to the height direction and the widthdirection, and the external electrodes 40 each connected to the internalconductive layers 30. The internal conductive layers each include aplurality of holes each having a different shape and a different areaequivalent diameter. The plurality of holes include first holesincluding ceramic pillars therein and second holes not including ceramicpillars therein. The ceramic pillars connect the ceramic layers 20 onone side and the other side of the internal electrode layer 30. Theexternal electrodes 40 include the first external electrode 40A in thevicinity of the first end surface LS1 and the second external electrode40B in the vicinity of the second end surface LS2. The plurality ofinternal conductive layers 30 include the plurality of first internalconductive layers 3 which are electrically connected to the firstexternal electrode 40A, and the plurality of second internal conductivelayers which are electrically connected to the second external electrode40B. The first internal conductive layers 31 each include the first sideWE1 in the vicinity of the first side surface WS1 and the second sideWE2 in the vicinity of the second side surface WS2. The second internalconductive layers 32 each include the third side WE3 in the vicinity ofthe first side surface WS1 and the fourth side WE4 in the vicinity ofthe second side surface WS2. In the first internal conductive layers 31,the first region A1 is defined as a region from a position about 10 μmaway from the first side WE1 to a position about 50 μm away from thefirst side WE1, the second region A2 is defined as a region from aposition about 10 μm away from the second side WE2 to a position about50 μm away from the second side WE2, the third region A3 is defined as aregion from a position about 10 μm away from the third side to aposition about 50 μm away from the third side, the fourth region A4 isdefined as a region from a position about 10 μm away from the fourthside to a position about 50 μm away from the fourth side. When the holesexisting in the first region A1, the second region A2, the third regionA3, and the fourth region A4 are defined as a population of the holes,and when the area equivalent diameter D90 is defined as an areaequivalent diameter in which a cumulative value in a cumulativedistribution of the area equivalent diameters of the holes in thepopulation of the holes is about 90%, the abundance ratio of the firstholes in the first population including the holes each having the areaequivalent diameter D90 or more among the population of the holes isabout 17% or more. With such a configuration, it is possible to providemultilayer ceramic electronic components with high reliability thatreduce or prevent electric field concentration.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing from the scopeand spirit of the present invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

What is claimed is:
 1. A multilayer ceramic electronic componentcomprising: a multilayer body including a plurality of stacked ceramiclayers, a plurality of internal conductive layers stacked on the ceramiclayers, a first main surface and a second main surface opposing eachother in a height direction, a first side surface and a second sidesurface opposing each other in a width direction perpendicular orsubstantially perpendicular to the height direction, and a first endsurface and a second end surface opposing each other in a lengthdirection perpendicular or substantially perpendicular to the heightdirection and the width direction; and external electrodes eachconnected to the internal conductive layers; wherein the internalconductive layers each include a plurality of holes each having adifferent area equivalent diameter; the plurality of holes include firstholes including ceramic pillars therein and second holes not includingceramic pillars therein, the ceramic pillars connecting ceramic layerson one side and one other side of the internal conductive layers; whenan area equivalent diameter in which a cumulative value in a cumulativedistribution of area equivalent diameters of the plurality of holesexisting in each of the internal conductive layers is about 90% isdefined as an area equivalent diameter D90, an abundance ratio of thefirst holes in a first population including holes each having the areaequivalent diameter D90 or more is about 14% or more.
 2. The multilayerceramic electronic component according to claim 1, wherein an abundanceratio of the first holes in a first population including holes eachhaving the area equivalent diameter D90 or more is about 29% or more. 3.The multilayer ceramic electronic component according to claim 1,wherein an abundance ratio of the first holes in a first populationincluding holes each having the area equivalent diameter D90 or more isabout 14% or more and about 86% or less.
 4. The multilayer ceramicelectronic component according to claim 1, wherein an abundance ratio ofthe first holes in a first population including holes each having thearea equivalent diameter D90 or more is about 29% or more and about 86%or less.
 5. The multilayer ceramic electronic component according toclaim 1, wherein an abundance ratio of the first holes in a firstpopulation including holes having the area equivalent diameter D90 ormore is higher than an abundance ratio of the first holes in a secondpopulation including holes each having an area equivalent diametersmaller than the area equivalent diameter D90.
 6. The multilayer ceramicelectronic component according to claim 1, wherein a coverage of each ofthe internal conductive layers with respect to the ceramic layers isabout 70% or more and about 99% or less.
 7. The multilayer ceramicelectronic component according to claim 1, wherein the coverage of eachof the internal conductive layers with respect to the ceramic layers isabout 86% or more and about 93% or less.
 8. The multilayer ceramicelectronic component according to claim 1, wherein the internalconductive layers each have a thickness of about 0.2 μm or more andabout 2.0 μm or less.
 9. The multilayer ceramic electronic componentaccording to claim 1, wherein the internal conductive layers each have athickness of about 0.2 μm or more and about 0.3 μm or less.
 10. Themultilayer ceramic electronic component according to claim 1, whereinthe area equivalent diameter D90 is about 4.0 μm or less.
 11. Themultilayer ceramic electronic component according to claim 1, whereinthe area equivalent diameter D90 is about 1.9 μm or more and about 4.0μm or less.
 12. The multilayer ceramic electronic component according toclaim 1, wherein a thickness of each of the internal conductive layersis smaller than the area equivalent diameter D90.
 13. The multilayerceramic electronic component according to claim 1, wherein a thicknessof each of the internal conductive layers is half or less the areaequivalent diameter D90.
 14. The multilayer ceramic electronic componentaccording to claim 1, wherein an average value of a circularity of theplurality of holes in the first population of holes each having the areaequivalent diameter D90 or more is about 0.7 or less.
 15. The multilayerceramic electronic component according to claim 1, wherein an averagevalue of a circularity of the plurality of holes in the first populationof holes each having the area equivalent diameter D90 or more is about0.46 or less.
 16. The multilayer ceramic electronic component accordingto claim 1, wherein an average value of a circularity of the pluralityof holes in the first population of holes each having the areaequivalent diameter D90 or more is about 0.2 or more and about 0.7 orless.
 17. The multilayer ceramic electronic component according to claim1, wherein an average value of a circularity of the plurality of holesin the first population of holes each having the area equivalentdiameter D90 or more is about 0.2 or more and about 0.46 or less. 18.The multilayer ceramic electronic component according to claim 1,wherein a dimension of the multilayer body in the length direction isabout 0.2 mm or more and about 6 mm or less, a dimension of themultilayer body in the height direction is about 0.05 mm or more andabout 5 mm or less, and a dimension of the multilayer body in the widthdirection is about 0.1 mm or more and about 5 mm or less.
 19. Themultilayer ceramic electronic component according to claim 1, whereineach of the plurality of dielectric layers includes BaTiO₃, CaTiO₃,SrTiO₃, or CaZrO₃ as a main component.
 20. The multilayer ceramicelectronic component according to claim 19, wherein each of theplurality of dielectric layers includes Mn compound, an Fe compound, aCr compound, a Co compound, or a Ni compound as a sub-component.